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參數(shù)資料
| 型號(hào)： | EM614163TS-40 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256K x 16 High Speed EDO DRAM |
| 中文描述： | 256K × 16高速EDO公司的DRAM |
| 文件頁數(shù)： | 6/23頁 |
| 文件大?。?/td> | 145K |
| 代理商： | EM614163TS-40 |
EtronTech
Em614163A-30/35/40/45
Preliminary
6
April 1997
AC Characteristics
(2, 3, 4, 5)
(Ta = 0 to +70
°
C
; V
CC
= 5V
ó
10%, V
SS
= 0V)
Test Conditions
Input rise and fall times: 2ns
AC test condition, input pulse levels 0V to 3V
Output load: 1 TTL loads and 50pF
Output timing reference levels:
V
OH
= 2.0V
V
OL
= 0.8V
Read, Write, Read-Modify-Write and Refresh Cycles
(Common Parameters)
Em614163A
-30/35/40/45
Min
53/60/66/75
Parameter
Symbol
Unit
Notes
Max
D
Random read or write cycle time
RASprecharge time
RAS pulse width
U/LCAS pulse width
t
RC
ns
1
t
RP
19/21/22/26
D
ns
t
RAS
t
CAS
t
ASR
30/35/40/45
5/6/7/8
0
100,000
100,000
D
ns
ns
ns
6
7
Row address setup time
Row address hold time
t
RAH
6/6/6/7
D
ns
Column address setup time
t
ASC
0
D
ns
8
Column address hold time
RAS to U/LCAS delay time
RAS to column address delay time
Column address to RAS lead time
RAS hold time
U/LCAS hold time
Column address hold time from RAS
Write command time from RAS
Data-in hold time from RAS
U/LCAS to RAS precharge time
OE to data-in delay time
t
CAH
5/6/6/7
D
ns
8
t
RCD
t
RAD
t
RAL
10/11/12/13
8/9/10/11
16/18/20/22
21/25/29/33
15/17/18/20
D
ns
ns
ns
9
10
t
RSH
6/7/7/8
D
ns
t
CSH
30/35/40/45
D
ns
t
AR
22/25/30/35
D
ns
t
WCR
22/25/30/35
D
ns
t
DHR
22/25/30/35
D
ns
t
CRP
5/5/5/5
D
ns
11
t
OED
7/7/8/8
D
ns
Transition time (rise and fall)
Refresh period
CAS to output in Low-Z
t
T
1
50
8
ns
ms
12
t
REF
D
t
CLZ
0
ns
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