參數(shù)資料
型號: EM48AM3284LBA-75FE
廠商: Electronic Theatre Controls, Inc.
英文描述: 512Mb (4M】4Bank】32) Synchronous DRAM
中文描述: 的512Mb(4分】4Bank】32)同步DRAM
文件頁數(shù): 5/17頁
文件大小: 231K
代理商: EM48AM3284LBA-75FE
eorex
EM48AM3284LBA
Jul. 2006
www.eorex.com
5/17
Recommended DC Operating Conditions
(V
DD
=1.8V
±
0.1V, T
A
=0°C ~70°C)
Symbol
Parameter
Test Conditions
Max.
Units
I
CC1
Operating Current
(Note 1)
Burst length=1,
t
RC
t
RC
(min.), I
OL
=0mA,
One bank active
CKE
V
IL
(max.), t
CK
=15ns
CKE
V
IL
(max.), t
CK
=
CKE
V
IL
(min.), t
CK
=15ns,
/CS
V
IH
(min.)
Input signals are changed
one time during 30ns
CKE
V
IL
(min.), t
CK
=
,
Input signals are stable
CKE
V
IL
(max.), t
CK
=15ns
CKE
V
IL
(max.), t
CK
=
CKE
V
IL
(min.), t
CK
=15ns,
/CS
V
IH
(min.)
Input signals are changed
one time during 30ns
CKE
V
IL
(min.), t
CK
=
,
Input signals are stable
75
mA
I
CC2P
I
CC2PS
1
1
mA
mA
Precharge Standby Current in
Power Down Mode
I
CC2N
4
mA
I
CC2NS
Precharge Standby Current in
Non-power Down Mode
2
mA
I
CC3P
I
CC3PS
3
mA
mA
Active Standby Current in
Power Down Mode
1.5
I
CC3N
10
mA
I
CC3NS
Active Standby Current in
Non-power Down Mode
7
mA
I
CC4
Operating Current (Burst
Mode)
(Note 2)
Refresh Current
(Note 3)
t
CCD
2CLKs, I
OL
=0mA
120
mA
I
CC5
t
RC
t
RC
(min.)
140
mA
I
CC6
Self Refresh Current
CKE
0.2V
0.8
(Note 4)
mA
*All voltages referenced to V
SS
.
Note 1:
I
CC1
depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during t
CK
(min.)
Note 2:
I
CC4
depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during t
CK
(min.)
Note 3:
Input signals are changed only one time during t
CK
(min.)
Note 4:
Standard power version.
Recommended DC Operating Conditions (Continued)
Symbol
Parameter
0
V
I
V
DDQ
, V
DDQ
=V
DD
All other pins not under test=0V
I
OL
Output Leakage Current
0
V
O
V
DDQ
, D
OUT
is disabled
V
OH
High Level Output Voltage
I
O
=-0.1mA
V
OL
Low Level Output Voltage
I
O
=+0.1mA
Test Conditions
Min.
Typ.
Max.
Units
I
IL
Input Leakage Current
-2
+2
uA
-1.5
+1.5
0.2
uA
V
V
V
DDQ
-0.2
相關(guān)PDF資料
PDF描述
EM512D16 512K x 16 bit Ultra-Low Power Asynchronous Static RAM
EM6011 ELECTRET CONDENSER MICROPHONE
EM6011-BC ELECTRET CONDENSER MICROPHONE
EM6011P-BC ELECTRET CONDENSER MICROPHONE
EM6011S-BC ELECTRET CONDENSER MICROPHONE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EM48AM3284LBA-75FH 制造商:EOREX 制造商全稱:EOREX 功能描述:512Mb (4M×4Bank×32) Synchronous DRAM
EM48AM3284LBA-75FS 制造商:EOREX 制造商全稱:EOREX 功能描述:512Mb (4M×4Bank×32) Synchronous DRAM
EM48AM3284LBA-7FE 制造商:EOREX 制造商全稱:EOREX 功能描述:512Mb (4M】4Bank】32) Synchronous DRAM
EM48AM3284LBA-8FE 制造商:EOREX 制造商全稱:EOREX 功能描述:512Mb (4M】4Bank】32) Synchronous DRAM
EM48AM3284LBB 制造商:EOREX 制造商全稱:EOREX 功能描述:512Mb (4M??4Bank??32) Mobile Synchronous DRAM