參數(shù)資料
型號(hào): EM42BM3284LBA-75FE
廠商: Electronic Theatre Controls, Inc.
英文描述: 512Mb (4M】4Bank】32) Double DATA RATE SDRAM
中文描述: 的512Mb(4分】4Bank】32)的雙倍數(shù)據(jù)速率SDRAM
文件頁(yè)數(shù): 7/20頁(yè)
文件大?。?/td> 343K
代理商: EM42BM3284LBA-75FE
eorex
EM42AM3284LBA
Jul. 2006
www.eorex.com
7/20
AC Operating Test Conditions
(V
DD
=1.8V
±
0.1V, T
A
=0°C ~70°C)
Item
Conditions
Output Reference Level
Output Load
Input Signal Level
Transition Time of Input Signals
Input Reference Level
0.9V/0.9V
See diagram as below
1.6V/0.2V
0.5ns
0.9V
AC Operating Test Characteristics
(V
DD
=1.8V
±
0.1V, T
A
=0°C ~70°C)
-7.5
Symbol
Parameter
Min.
2
2
0.45
Max.
6
6
0.55
Units
t
DQCK
t
DQSCK
t
CL
,t
CH
DQ output access from CLK,/CLK
DQS output access from CLK,/CLK
CL low/high level width
ns
ns
t
CK
t
CK
Clock Cycle Time
7.5
ns
t
DH
,t
DS
DQ and DM hold/setup time
DQ and DM input pulse width for
each input
Data out high/low impedance time
from CLK,/CLK
DQS-DQ skew for associated DQ
signal
Write command to first latching DQS
transition
DQS input valid window
Mode Register Set command cycle
time
Write Preamble setup time
Write Preamble
Address/control input hold/setup
time
Read Preamble
0.8
ns
t
DIPW
1.75
ns
t
HZ
,t
LZ
1
6
ns
t
DQSQ
0.6
ns
t
DQSS
0.75
1.25
t
CK
t
DSL
,t
DSH
0.2
t
CK
t
MRD
2
t
CK
t
WPRES
t
WPST
0
ns
t
CK
0.4
0.6
t
IH
,t
IS
1.3
ns
t
RPRE
0.9
1.1
t
CK
相關(guān)PDF資料
PDF描述
EM42BM3284LBA-7FE 512Mb (4M】4Bank】32) Double DATA RATE SDRAM
EM42BM3284LBA-8FE 512Mb (4M】4Bank】32) Double DATA RATE SDRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EM42BM3284LBA-7FE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Mb (4M×4Bank×32) Double DATA RATE SDRAM
EM42BM3284LBA-8FE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Mb (4M×4Bank×32) Double DATA RATE SDRAM
EM42CM1684RTA 制造商:EOREX 制造商全稱:EOREX 功能描述:Burst Length (B/L) of 2, 4, 8
EM42CM1684RTA-6F 制造商:EOREX 制造商全稱:EOREX 功能描述:Burst Length (B/L) of 2, 4, 8
EM42CM1684RTA-75F 制造商:EOREX 制造商全稱:EOREX 功能描述:Burst Length (B/L) of 2, 4, 8