參數(shù)資料
型號: EM424M924VTB
廠商: Electronic Theatre Controls, Inc.
英文描述: 16Mb ( 2Banks ) Synchronous DRAM
中文描述: 16兆(2Banks)同步DRAM
文件頁數(shù): 14/18頁
文件大?。?/td> 833K
代理商: EM424M924VTB
Rev.01
16Mb SDRAM
14/18
Absolute Maximum Ratings
Symbol
Item
Rating
Units
V
IN
, V
OUT
Input, Output Voltage
-0.3 ~ 4.6
V
V
DD
, V
DDQ
Power Supply Voltage
-0.3 ~ 4.6
V
T
OP
Operating Temperature
0 ~ 70
°C
T
STG
Storage Temperature
-55 ~ 150
°C
P
D
Power Dissipation
1
W
I
OS
Short Circuit Current
50
mA
Recommended DC Operation Conditions ( Ta = 0 ~ 70°C )
Symbol
Parameter
Min.
Units
V
DD
Power Supply Voltage
3.0
V
V
DDQ
Power Supply Voltage (for I/O Buffer)
3.0
V
V
IH
Input logic high voltage
2.0
V
V
IL
Input logic low voltage
-0.3
V
Note :
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
Typical
3.3
3.3
Max.
3.6
3.6
V
DD
+0.3
0.8
Note :
1. All voltage referred to V
SS
.
2. V
IH
(max) = 5.6V for pulse w idth
3ns
3. V
IL
(min) = -2.0V for pulse w idth
3ns
Capacitance ( Vcc =3.3V, f = 1MHz, Ta = 25°C )
Symbol
Parameter
Min.
Units
C
CLK
Clock capacitance
2.5
pF
C
I
Input capacitance for CLK, CKE, Address, /CS,
/RAS, /CAS, /WE, DQML,DQMU
2.5
pF
Max.
4.0
5.0
C
O
Input/Output capacitance
4.0
pF
6.5
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