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參數(shù)資料
| 型號： | EM424M812VTA |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 16Mb ( 2Banks ) Synchronous DRAM |
| 中文描述： | 16兆（2Banks）同步DRAM |
| 文件頁數(shù)： | 14/18頁 |
| 文件大?。?/td> | 833K |
| 代理商： | EM424M812VTA |
Rev.01
16Mb SDRAM
14/18
Absolute Maximum Ratings
Symbol
Item
Rating
Units
V
IN
, V
OUT
Input, Output Voltage
-0.3 ~ 4.6
V
V
DD
, V
DDQ
Power Supply Voltage
-0.3 ~ 4.6
V
T
OP
Operating Temperature
0 ~ 70
°C
T
STG
Storage Temperature
-55 ~ 150
°C
P
D
Power Dissipation
1
W
I
OS
Short Circuit Current
50
mA
Recommended DC Operation Conditions ( Ta = 0 ~ 70°C )
Symbol
Parameter
Min.
Units
V
DD
Power Supply Voltage
3.0
V
V
DDQ
Power Supply Voltage (for I/O Buffer)
3.0
V
V
IH
Input logic high voltage
2.0
V
V
IL
Input logic low voltage
-0.3
V
Note :
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
Typical
3.3
3.3
Max.
3.6
3.6
V
DD
+0.3
0.8
Note :
1. All voltage referred to V
SS
.
2. V
IH
(max) = 5.6V for pulse w idth
≤
3ns
3. V
IL
(min) = -2.0V for pulse w idth
≤
3ns
Capacitance ( Vcc =3.3V, f = 1MHz, Ta = 25°C )
Symbol
Parameter
Min.
Units
C
CLK
Clock capacitance
2.5
pF
C
I
Input capacitance for CLK, CKE, Address, /CS,
/RAS, /CAS, /WE, DQML,DQMU
2.5
pF
Max.
4.0
5.0
C
O
Input/Output capacitance
4.0
pF
6.5
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| EM424M812VTB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mb ( 2Banks ) Synchronous DRAM |
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| EM424M814VTB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mb ( 2Banks ) Synchronous DRAM |
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| EM424M822VTB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mb ( 2Banks ) Synchronous DRAM |
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