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參數(shù)資料
| 型號(hào)： | EM4069A6CI2LC |
| 英文描述： | ACPI Regulator/Controller for Dual Channel DDR Memory Systems; Temperature Range: 0°C to 70°C; Package: 28-QFN T&R |
| 中文描述： | 模擬雜項(xiàng) |
| 文件頁(yè)數(shù)： | 8/15頁(yè) |
| 文件大?。?/td> | 169K |
| 代理商： | EM4069A6CI2LC |
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EM4069
EM4169
Copyright
2002, EM Microelectronic-Marin SA
2
www.emmicroelectronic.com
Absolute Maximum Ratings
VSS = 0V
Parameter
Symbol
Conditions
Power supply
VDD
-0.3 to +5.5V
Input Voltage (pads TST,
TCP, TIO)
VPIN
- 0.3 to
VDD+0.3V
Input current on COIL1
ICOIL1
-30 to
+30mA
Input voltage on COIL1
VCOIL1
-10 to +10V
Storage temperature
TSTORE
-55 to
+125°C
Electrostatic discharge to
MIL-STD-883C method 3015
VESD
1000V
Stresses above these listed maximum ratings may cause
permanent damage to the device. Exposure beyond
specified electrical characteristics may affect device
reliability or cause malfunction.
Electrical
parameters
and
functionality
are
not
guaranteed when the circuit is exposed to light.
Handling Procedures
This device has built-in protection against high static
voltages or electric fields. However due to the unique
properties of this device, anti-static precautions should
be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur
when all terminal voltages are kept within the supply
voltage range.
Operating Conditions VSS = 0V
Parameter
Symbol
Min.
Typ.
Max. Units
Operating temperature
AC voltage on coil 1
Maximum coil current
Frequency on coil 1
TOP
VCOIL1
ICOIL1
FCOIL1
-40
-10
100
+25
*
125
+85
10
150
°C
Vpp
mA
kHz
*) Maximum voltage is defined by forcing 10mA on
Coil1 – Vs
Electrical Characteristics
Unless otherwise specified: VDD= 1.0V to 5.5V, TA=-40 to +125°C.
Parameter
Symbol
Condition
Min.
Typ.
Max.
Units
Regulated Supply Voltage
VDD
ICOIL1 = 10mA
3.0
3.5
4.0
V
Reg. Voltage reading EEPROM (note 3)
VRD
2.0
V
Supply current in read mode
IRD
3.8
5,5
A
Reg. Voltage writing EEPROM
VWR
2.5
V
Supply current write mode
IWR
VDD = 3.5 V
50
100
A
Power Check Voltage
VPC
2.4
2.8
3.15
V
Modulator ON voltage drop
Von1
ICOIL1 = ±100
A
1.2
1.45
1.75
V
Modulator ON voltage drop
Von2
ICOIL1 = ±1 mA
33.6
4.5
V
POR level
VPOR
Rising edge
1.5
1.85
2.20
V
Clock extractor
VCOIL1
0.5
VPP
Peak detector threshold.
Vpd
VDD = 3.3 V
3.2
4
4.6
VPP
Peak detector hysteresis
Vpdh
VDD = 3.3 V
20
100
200
mV
Resonance capacitor (note 1)
CR
32 kHz, 0.3Vpp
78
pF
EEPROM data retention (note 2)
TRET
TOP = 55°C
10
years
EEPROM write cycles
NCY
VDD = 3.6 V
100000
cycles
Note 1:
Value of the resonance capacitor may vary in limits of
± 12%
Statistics show a variation of capacitance within one lot of
± 5%.
These figures are given as information only.
Note 2:
Based on 1000 hours at 150°C.
Note 3:
VRD must be higher than VPOR Level.
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