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參數(shù)資料
| 型號： | EM23C8000 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | High Performance 1024K × 8 CMOS ROM(高性能8M位（1024K × 8）CMOS ROM) |
| 中文描述： | 高性能1024K × 8的CMOS光盤（高性能分位（1024K × 8）的CMOS光盤） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 31K |
| 代理商： | EM23C8000 |
1
* This specification are subject to be changed without notice.
1024K X 8 CMOS ROM
10.22.1997
EM23C8000 SERIES
GENERAL DESCRIPTION
The EM23C8000 series high performance Read Only Memory is organized as 1,048,576 words by 8 bits with
access time 150 ns. It is designed to be compatible with all microprocessor and similar applications where high
performance large bit storage and simple interface are important design considerations.
The EM23C8000P offers the simplest operation (no power down). Its programmable chip selects allow up to
four 8000K ROMs to be Wired-OR without external decoding.
The EM23C8000AP has the automatic power down feature. The power down capability is controlled by the
Chip Enable (CE/CE) input. When CE goes to high or CE goes low, the device will automatically goes to
power down mode and remains in a low power standby mode as long as CE remains high. This unique feature
provides system level power savings as much as 90%. An additional feature of the EM23C8000AP is the Output
Enable (OE/OE) function. This eliminates bus connection in multiple bus microprocessor systems.
FEATURES
1,048,576 x 8 bit organization
Access time:
150 ns (max.) at 4.5V
≤
V
CC
≤
5.5V
Low-power consumption:
Operating: 275 mW (max.)
Standby: 275
μ
W (max.)
Fully-static operation
Three-state outputs
Completely TTL compatible.
EM23C8000FP,
- Non power down version.
- Two programmable chip selects (CS).
EM23C8000EP,
- Automatic power down (CE).
- Output Enable function (OE).
Package:
EM23C8000EP, EM23C8000FP - 32 pins 600 mil plastic DIP.
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