3
FN7438.1
October 30, 2008
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
VS+
Supply Voltage between VS+ and GND . . . . . . . . . . . . . .18V
Supply Voltage between VSD and GND . . . . . . . . . . . . . . . . . . . .4V
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 65mA
Input Voltages to GND
SET, CE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4V
CTL. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +16V
Output Voltages to GND
OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +20V
AVDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +20V
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below
Operating Conditions
Ambient Operating Temperature . . . . . . . . . . . . . . . . -40°C to +85°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
VSD = 3V, VS+ = 15V, AVDD = 15V, RSET = 24.9kΩ, and TA = +25°C unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
VS+
Supply Voltage
4.5
16.5
V
IS+
Quiescent Current
EL9200
3.8
4.8
mA
EL9201
7.6
9.6
mA
EL9202
10.5
16
mA
VSD
Logic Supply Voltage
For programming
3
3.6
V
For operation
2.6
3.6
V
ISD
Quiescent Logic Current
CE = 3.6V
50
A
CE = GND
25
A
Program (charge pump current) (Note
1)23
mA
3
mA
IADD
Supply Current
25
A
CTLIH
CTL High Voltage
2.6V < VSD < 3.6V
0.7*VSD
0.8*VSD
V
CTLIL
CTL Low Voltage
2.6V < VSD < 3.6V
0.2*VSD
0.3*VSD
V
CTLIHRPW
CTL High Rejected Pulse Width
20
s
CTLILRPW
CTL Low Rejected Pulse Width
20
s
CTLIHMPW
CTL High Minimum Pulse Width
200
s
CTLILMPW
CTL Low Minimum Pulse Width
200
s
CTLMTC
CTL Minimum Time Between Counts
10
s
ICTL
CTL Input Current
CTL = GND
10
A
CTL = VSD
10
A
CTLCAP
CTL Input Capacitance
10
pF
CEIL
CE Input Low Voltage
2.6V < VSD < 3.6V
0.4
V
CEIH
CE Input High Voltage
2.6V < VSD < 3.6V
1.6
V
CEST
CE Minimum Start-Up Time
1
ms
CTLPROM
CTL EEPROM Program Voltage
2.6V < VSD < 3.6V (Note 2) 4.9
15.75
V
CTLPT
CTL EEPROM Programming Signal
Time
> 4.9V
200
s
PT
Programming Time
100
ms
EEWC
EE Write Cycles
1000
cycles
EL9200, EL9201, EL9202