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參數(shù)資料
| 型號(hào)： | EL5134IS-T7 |
| 廠商： | Intersil |
| 文件頁數(shù)： | 9/15頁 |
| 文件大小： | 0K |
| 描述： | IC OP AMP 630MHZ LO NOISE 8-SOIC |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 放大器類型： | 電壓反饋 |
| 電路數(shù)： | 1 |
| 轉(zhuǎn)換速率： | 475 V/µs |
| 增益帶寬積： | 1.5GHz |
| -3db帶寬： | 650MHz |
| 電流 - 輸入偏壓： | 3.7µA |
| 電壓 - 輸入偏移： | 200µV |
| 電流 - 電源： | 6.7mA |
| 電流 - 輸出 / 通道： | 140mA |
| 電壓 - 電源，單路/雙路(±)： | 5 V ~ 12 V，±2.5 V ~ 6 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOIC |
| 包裝： | 帶卷 (TR) |
3
FN7383.4
May 4, 2007
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage from VS+ to VS- . . . . . . . . . . . . . . . . . . . . . . . 13.2V
SR, Supply Rate of Supply Voltage Slew Rate . . . . . . . . . . . . 1V/s
IIN-, IIN+, CE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mA
Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +125°C
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +125°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
VS+ = +5V, VS- = -5V, Av=+5, RF = 100Ω, RG = 25Ω, RL = 500Ω,TA = +25°C, unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
VOS
Offset Voltage
-1
0.2
1
mV
EL5234
0.3
±1.5
mV
TCVOS
Offset Voltage Temperature Coefficient
Measured from TMIN to TMAX
-0.8
V/°C
IB
Input Bias Current
VIN = 0V
2.5
3.7
5.5
A
IOS
Input Offset Current
VIN = 0V
-0.7
0.3
0.7
nA
TCIOS
Input Bias Current Temperature
Coefficient
Measured from TMIN to TMAX
-3
nA/°C
PSRR
Power Supply Rejection Ratio
VS+ = 4.75V to 5.25V
75
85
dB
CMRR
Common Mode Rejection Ratio
VCM = ±3V
80
108
dB
CMIR
Common Mode Input Range
Guaranteed by CMRR test
±3
±3.3
V
RIN
Input Resistance
Common mode
5
16
M
Ω
CIN
Input Capacitance
1pF
IS
Supply Current, per amplifier
5.6
6.7
7.8
mA
AVOL
Open Loop Gain
RL = 1kΩ to GND
4.0
8.0
kV/V
VO
Voltage Swing
RL = 1kΩ, RF = 900Ω, RG = 100Ω
±3.5
3.9
V
RL = 150Ω, RF = 900Ω, RG = 100Ω
±3.3
3.65
V
ISC
Short Circuit Current
RL = 10Ω
70
140
mA
BW-3dB
-3dB Bandwidth
AV = 5, RL = 1kΩ
650
MHz
BW-0.1dB
±0.1dB Bandwidth
AV = 5, RL = 1kΩ
40
MHz
GBWP
Gain Bandwidth Product
1500
MHz
PM
Phase Margin
RL = 1kΩ, CL = 6pF
55
°
SR
Slew Rate
VS = +5V, RL = 150Ω, VOUT = 0V to 3V
350
475
V/s
tR
Rise Time
±0.1VSTEP
1.75
ns
tF
Fall Time
±0.1VSTEP
1.75
ns
OS
Overshoot
±0.1VSTEP
25
%
tS
0.01% Settling Time
14
ns
dG
Differential Gain
AV = 5, RF = 1kΩ
0.12
%
dP
Differential Phase
AV = 5, RF = 1kΩ
0.08
°
eN
Input Noise Voltage
f = 10kHz
1.5
nV/
√Hz
iN
Input Noise Current
f = 10kHz
0.9
pA/
√Hz
EL5134, EL5135, EL5234, EL5235
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