參數(shù)資料
型號: EL5127CYZ-T7
廠商: Intersil
文件頁數(shù): 13/17頁
文件大?。?/td> 0K
描述: IC BUFFER LP QUAD 2.5MHZ 10-MSOP
標(biāo)準包裝: 1,500
放大器類型: 緩沖器
電路數(shù): 4
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 2.2 V/µs
-3db帶寬: 2.5MHz
電流 - 輸入偏壓: 2nA
電壓 - 輸入偏移: 1000µV
電流 - 電源: 750µA
電流 - 輸出 / 通道: 120mA
電壓 - 電源,單路/雙路(±): 4.5 V ~ 16.5 V,±2.25 V ~ 8.25 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 10-TFSOP,10-MSOP(0.118",3.00mm 寬)
供應(yīng)商設(shè)備封裝: 10-MSOP
包裝: 帶卷 (TR)
5
FN7111.4
May 4, 2007
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage Between VS+ and VS-. . . . . . . . . . . . . . . . . . . .+18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VS- -0.5V, VS +0.5V
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 30mA
ESD Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
VS+ = +5V, VS- = -5V, RL = 10kΩ, CL = 10pF to 0V, TA = +25°C, Unless Otherwise Specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 0V
1
15
mV
TCVOS
Average Offset Voltage Drift
(Note 1)
5
V/°C
IB
Input Bias Current
VCM = 0V
2
50
nA
RIN
Input Impedance
1G
Ω
CIN
Input Capacitance
1.35
pF
AV
Voltage Gain
-4.5V
≤ VOUT ≤ 4.5V
0.99
1.01
V/V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
-4.95
-4.85
V
VOH
Output Swing High
IL = +5mA
4.85
4.95
V
IOUT (max)
Max Output Current (Note 2)
RL = 10Ω
100
±120
mA
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
VS is moved from ±2.25V to ±7.75V
55
80
dB
IS
Supply Current
No load (EL5127)
0.7
0.9
mA
No load (EL5227)
1.2
1.4
mA
No load (EL5327)
1.4
2
mA
No load (EL5427)
1.6
2.2
mA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 3)
-4.0V
≤ VOUT ≤ 4.0V, 20% to 80%
0.9
2.2
V/s
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V step
900
ns
BW
-3dB Bandwidth
RL = 10kΩ, CL = 10pF
2.5
MHz
CS
Channel Separation
f = 100kHz
75
dB
NOTES:
1. Measured over operating temperature range.
2. Instantaneous peak current.
3. Slew rate is measured on rising and falling edges.
EL5127, EL5227, EL5327, EL5427
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