Absolute Maximum Ratings (TA = +25掳C) Thermal Information" />
鍙冩暩(sh霉)璩囨枡
鍨嬭櫉锛� EL5111IYE
寤犲晢锛� Intersil
鏂囦欢闋佹暩(sh霉)锛� 12/18闋�
鏂囦欢澶�?銆�?/td> 0K
鎻忚堪锛� IC OPAMP SGL R-R 60MHZ 8-HMSOP
妯�(bi膩o)婧�(zh菙n)鍖呰锛� 50
鏀惧ぇ鍣ㄩ鍨嬶細 闆诲鍙嶉
闆昏矾鏁�(sh霉)锛� 1
杓稿嚭椤炲瀷锛� 婊挎摵骞�
杞�(zhu菐n)鎻涢€熺巼锛� 75 V/µs
澧炵泭甯跺绌嶏細 32MHz
-3db甯跺锛� 60MHz
闆绘祦 - 杓稿叆鍋忓锛� 2nA
闆诲 - 杓稿叆鍋忕Щ锛� 3000µV
闆绘祦 - 闆绘簮锛� 2.5mA
闆绘祦 - 杓稿嚭 / 閫氶亾锛� 65mA
闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±)锛� 4.5 V ~ 16.5 V锛�±2.25 V ~ 8.25 V
宸ヤ綔婧害锛� -40°C ~ 85°C
瀹夎椤炲瀷锛� 琛ㄩ潰璨艰
灏佽/澶栨锛� 8-VSSOP锛�8-MSOP锛�0.118"锛�3.00mm 瀵級瑁搁湶鐒婄洡
渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁濓細 8-HMSOP
鍖呰锛� 绠′欢
Absolute Maximum Ratings (TA = +25掳C)
Thermal Information
Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VS- - 0.5V, VS +0.5V
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 65mA
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +150掳C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65掳C to +150掳C
Ambient Operating Temperature . . . . . . . . . . . . . . . . -40掳C to +85掳C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
CAUTION: Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥� may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
3
FN7119.7
May 7, 2007
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
VS+ = +5V, VS- = -5V, RL = 1k惟 to 0V, TA = +25掳C, Unless Otherwise Specified
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 0V
3
15
mV
TCVOS
Average Offset Voltage Drift (Note 1)
7
V/掳C
IB
Input Bias Current
VCM = 0V
2
60
nA
RIN
Input Impedance
1
G
惟
CIN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
-5.5
+5.5
V
CMRR
Common-Mode Rejection Ratio
for VIN from -5.5V to 5.5V
50
70
dB
AVOL
Open-Loop Gain
-4.5V
鈮� V
OUT 鈮� 4.5V
62
70
dB
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
-4.92
-4.85
V
VOH
Output Swing High
IL = 5mA
4.85
4.92
V
ISC
Short-Circuit Current
卤180
mA
IOUT
Output Current
卤65
mA
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
VS is moved from 卤2.25V to 卤7.75V
60
80
dB
IS
Supply Current
No load (EL5111)
2.5
4.5
mA
No load (EL5211)
5
7.5
mA
No load (EL5411)
10
15
mA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 2)
-4.0V
鈮� V
OUT 鈮� 4.0V, 20% to 80%
75
V/s
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V step
80
ns
BW
-3dB Bandwidth
60
MHz
GBWP
Gain-Bandwidth Product
32
MHz
PM
Phase Margin
50
掳
CS
Channel Separation
f = 5MHz (EL5211 and EL5411 only)
110
dB
dG
Differential Gain (Note 3)
RF = RG = 1k惟 and VOUT = 1.4V
0.17
%
dP
Differential Phase (Note 3)
RF = RG = 1k惟 and VOUT = 1.4V
0.24
掳
NOTES:
1. Measured over operating temperature range.
2. Slew rate is measured on rising and falling edges.
3. NTSC signal generator used.
EL5111, EL5211, EL5411
鐩搁棞(gu膩n)PDF璩囨枡
PDF鎻忚堪
3410.0025.04 FUSE MGA 125V 375MA
EL5111IWT-T7A IC OPAMP SGL R-R 60MHZ 5-TSOT
EL5103IW-T7 IC VFA SLEW SGL 400MHZ SOT23-5
3410.0025.03 FUSE MGA 125V 375MA
EL5111IWT-T7 IC OPAMP SGL R-R 60MHZ 5-TSOT
鐩搁棞(gu膩n)浠ｇ悊鍟�/鎶€琛�(sh霉)鍙冩暩(sh霉)
鍙冩暩(sh霉)鎻忚堪
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EL5111IYE-T7 鍔熻兘鎻忚堪:IC OPAMP SGL R-R 60MHZ 8-HMSOP RoHS:鍚� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 妯�(bi膩o)婧�(zh菙n)鍖呰:50 绯诲垪:- 鏀惧ぇ鍣ㄩ鍨�:閫氱敤 闆昏矾鏁�(sh霉):2 杓稿嚭椤炲瀷:婊挎摵骞� 杞�(zhu菐n)鎻涢€熺巼:1.8 V/µs 澧炵泭甯跺绌�:6.5MHz -3db甯跺:4.5MHz 闆绘祦 - 杓稿叆鍋忓:5nA 闆诲 - 杓稿叆鍋忕Щ:100µV 闆绘祦 - 闆绘簮:65µA 闆绘祦 - 杓稿嚭 / 閫氶亾:35mA 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):1.8 V ~ 5.25 V锛�±0.9 V ~ 2.625 V 宸ヤ綔婧害:-40°C ~ 85°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:10-TFSOP锛�10-MSOP锛�0.118"锛�3.00mm 瀵級 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:10-MSOP 鍖呰:绠′欢
EL5111IYEZ 鍔熻兘鎻忚堪:楂橀€熼亱(y霉n)绠楁斁澶у櫒 EL5111IYEZ 60 MHZ R2R I/O AMP RoHS:鍚� 鍒堕€犲晢:Texas Instruments 閫氶亾鏁�(sh霉)閲�:1 闆诲澧炵泭 dB:116 dB 杓稿叆瑁�(b菙)鍎熼浕澹�:0.5 mV 杞�(zhu菐n)鎻涢€熷害:55 V/us 宸ヤ綔闆绘簮闆诲:36 V 闆绘簮闆绘祦:7.5 mA 鏈€澶у伐浣滄韩搴�:+ 85 C 瀹夎棰�(f膿ng)鏍�:SMD/SMT 灏佽 / 绠遍珨:SOIC-8 灏佽:Tube
EL5111IYEZ-T13 鍔熻兘鎻忚堪:楂橀€熼亱(y霉n)绠楁斁澶у櫒 EL5111IYEZ 60 MHZ R2R I/O AMP RoHS:鍚� 鍒堕€犲晢:Texas Instruments 閫氶亾鏁�(sh霉)閲�:1 闆诲澧炵泭 dB:116 dB 杓稿叆瑁�(b菙)鍎熼浕澹�:0.5 mV 杞�(zhu菐n)鎻涢€熷害:55 V/us 宸ヤ綔闆绘簮闆诲:36 V 闆绘簮闆绘祦:7.5 mA 鏈€澶у伐浣滄韩搴�:+ 85 C 瀹夎棰�(f膿ng)鏍�:SMD/SMT 灏佽 / 绠遍珨:SOIC-8 灏佽:Tube
EL5111IYEZ-T7 鍔熻兘鎻忚堪:楂橀€熼亱(y霉n)绠楁斁澶у櫒 EL5111IYEZ 60 MHZ R2R I/O AMP RoHS:鍚� 鍒堕€犲晢:Texas Instruments 閫氶亾鏁�(sh霉)閲�:1 闆诲澧炵泭 dB:116 dB 杓稿叆瑁�(b菙)鍎熼浕澹�:0.5 mV 杞�(zhu菐n)鎻涢€熷害:55 V/us 宸ヤ綔闆绘簮闆诲:36 V 闆绘簮闆绘祦:7.5 mA 鏈€澶у伐浣滄韩搴�:+ 85 C 瀹夎棰�(f膿ng)鏍�:SMD/SMT 灏佽 / 绠遍珨:SOIC-8 灏佽:Tube
鐧�(f膩)甯冪穵鎬ラ噰璩硷紝3鍒嗛悩宸﹀彸鎮ㄥ皣寰楀埌鍥炲京(f霉)銆�

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鐧�(f膩)甯冩垚鍔�锛佹偍鍙互绻肩簩(x霉)鐧�(f膩)甯冮噰璩�銆備篃鍙互閫�(j矛n)鍏ユ垜鐨勫悗鑷�锛屾煡鐪嬪牨鍍�

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*鍨嬭櫉 *鏁�(sh霉)閲� 寤犲晢 鎵硅櫉 灏佽
娣诲姞鏇村閲囪臣

鎴戠殑鑱�(li谩n)绯绘柟寮�

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