參數(shù)資料
型號(hào): EL2126CW-T13
英文描述: 3.3 Volt Ringing SLIC Family for Voice Over Broadband (VOB); Temperature Range: 0&degC to 70°C; Package: 32-QFN
中文描述: 放大器。其他
文件頁(yè)數(shù): 6/16頁(yè)
文件大小: 408K
代理商: EL2126CW-T13
14
EL2126C
Ultra-Low Noise, Low Power, Wideband Amplifier
E
L
2126C
Applications Information
Product Description
The EL2126C is an ultra-low noise, wideband mono-
lithic operational amplifier built on Elantec's proprietary
high speed complementary bipolar process. It features
1.3nV/
√Hz input voltage noise, 200V typical offset
voltage, and 73dB THD. It is intended for use in systems
such as ultrasound imaging where very small signals are
needed to be amplified. The EL2126C also has excellent
DC specifications: 200V VOS, 22A IB, 0.4A IOS,
and 106dB CMRR. These specifications allow the
EL2126C to be used in DC-sensitive applications such
as difference amplifiers.
Gain-Bandwidth Product
The EL2126C has a gain-bandwidth product of 650MHz
at ±5V. For gains less than 20, higher-order poles in the
amplifier's transfer function contribute to even higher
closed-loop bandwidths. For example, the EL2126C has
a -3dB bandwidth of 100MHz at a gain of 10 and
decreases to 33MHz at gain of 20. It is important to note
that the extra bandwidth at lower gain does not come at
the expenses of stability. Even though the EL2126C is
designed for gain
≥ 10. With external compensation, the
device can also operate at lower gain settings. The RC
network shown in Figure 1 reduces the feedback gain at
high frequency and thus maintains the amplifier stabil-
ity. R values must be less than RF divided by 9 and 1
divided by 2
πRC must be less than 200MHz.
Choice of Feedback Resistor, RF
The feedback resistor forms a pole with the input capac-
itance. As this pole becomes larger, phase margin is
reduced. This increases ringing in the time domain and
peaking in the frequency domain. Therefore, RF has
some maximum value which should not be exceeded for
optimum performance. If a large value of RF must be
used, a small capacitor in the few pF range in parallel
with RF can help to reduce this ringing and peaking at
the expense of reducing the bandwidth. Frequency
response curves for various RF values are shown in the
typical performance curves section of this data sheet.
Noise Calculations
The primary application for the EL2126C is to amplify
very small signals. To maintain the proper signal-to-
noise ratio, it is essential to minimize noise contribution
from the amplifier. Figure 2 below shows all the noise
sources for all the components around the amplifier.
VN is the amplifier input voltage noise
IN+ is the amplifier positive input current noise
IN- is the amplifier negative input current noise
VRX is the thermal noise associated with each resistor:
where:
- k is Boltzmann's constant = 1.380658 x 10-23
- T is temperature in degrees Kelvin (273+ °C)
-
+
RF
R
C
VIN
VOUT
Figure 1.
-
+
VON
VIN
IN+
IN-
R2
R3
R1
VN
VR3
VR2
VR1
Figure 2.
V
RX
4kTRx
=
相關(guān)PDF資料
PDF描述
EL2125CW-T13 3.3 Volt Ringing SLIC Family for Voice Over Broadband (VOB); Temperature Range: 0&degC to 70°C; Package: 28-PLCC
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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EL2126CW-T7A 功能描述:IC AMP ULT LO NOISE/PWR SOT23-5 RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 放大器類型:通用 電路數(shù):4 輸出類型:滿擺幅 轉(zhuǎn)換速率:0.6 V/µs 增益帶寬積:1MHz -3db帶寬:- 電流 - 輸入偏壓:2pA 電壓 - 輸入偏移:1000µV 電流 - 電源:85µA 電流 - 輸出 / 通道:20mA 電壓 - 電源,單路/雙路(±):1.8 V ~ 6 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:14-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:14-SOICN 包裝:剪切帶 (CT) 產(chǎn)品目錄頁(yè)面:680 (CN2011-ZH PDF) 其它名稱:MCP6L04T-E/SLCT
EL2126CWZ-T7 功能描述:高速運(yùn)算放大器 EL2126CWZ LW NOISE CVR A=10 RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補(bǔ)償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
EL2126CWZ-T7A 功能描述:高速運(yùn)算放大器 EL2126CWZ LW NOISE CVR A=10 RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補(bǔ)償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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