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參數(shù)資料
| 型號： | EL2075C |
| 英文描述： | 2 GHz Voltage-Feedback Amplifier(2 GHz 電壓反饋放大器) |
| 中文描述： | 2 GHz的電壓反饋放大器（2 GHz的電壓反饋放大器） |
| 文件頁數(shù)： | 12/12頁 |
| 文件大小： | 301K |
| 代理商： | EL2075C |
EL2075C
2 GHz GBWP Gain-of-10 Stable Operational Amplifier
Applications Information
Product Description
The EL2075 is a wideband monolithic operation-
al amplifier built on a high-speed complementary
bipolar process The EL2075 uses a classical volt-
age-feedback topology which allows it to be used
in a variety of applications requiring a noise gain
t
10 where current-feedback amplifiers are not
appropriate because of restrictions placed upon
the feedback element used with the amplifier
The conventional topology of the EL2075 allows
for example a capacitor to be placed in the feed-
back path making it an excellent choice for ap-
plications such as active filters
sample-and-
holds or integrators Similarly because of the
ability to use diodes in the feedback network the
EL2075 is an excellent choice for applications
such as log amplifiers
The EL2075 also has excellent DC specifications
200
mV VOS 2 mAIB 01 mAIOS and 90 dB of
CMRR These specifications allow the EL2075 to
be used in DC-sensitive applications such as dif-
ference amplifiers
Furthermore
the current
noise of the EL2075 is only 32 pA
0Hz making
it an excellent choice for high-sensitivity trans-
impedance amplifier configurations
Gain-Bandwidth Product
The EL2075 has a gain-bandwidth product of
2 GHz For gains greater than 40 its closed-loop
b
3 dB bandwidth is approximately equal to the
gain-bandwidth product divided by the noise
gain of the circuit For gains less than 40 higher-
order poles in the amplifier’s transfer function
contribute to even higher closed loop band-
widths For example the EL2075 has a b3dB
bandwidth of 400 MHz at a gain of a10 drop-
ping to 200 MHz at a gain of a20 It is impor-
tant to note that the EL2075 has been designed
so that this ‘‘extra’’ bandwidth in low-gain appli-
cations does not come at the expense of stability
As seen in the typical performance curves the
EL2075 in a gain of a10 only exhibits 15 dB of
peaking with a 100
X load
Output Drive Capability
The EL2075 has been optimized to drive 50
X and
75
X loads It can easily drive 6 VPP into a 50X
load This high output drive capability makes the
EL2075 an ideal choice for RF and IF applica-
tions
Furthermore
the current drive of the
EL2075 remains a minimum of 50 mA at low
temperatures The EL2075 is current-limited at
the output allowing it to withstand momentary
shorts to ground
However
power dissipation
with the output shorted can be in excess of the
power-dissipation capabilities of the package
Capacitive Loads
Although the EL2075 has been optimized to
drive resistive loads as low as 50
X capacitive
loads will decrease the amplifier’s phase margin
which may result in peaking overshoot and pos-
sible oscillation For optimum AC performance
capacitive loads should be reduced as much as
possible or isolated via a series output resistor
Coax lines can be driven as long as they are ter-
minated with their characteristic impedance
When properly terminated the capacitance of co-
axial cable will not add to the capacitive load
seen by the amplifier Capacitive loads greater
than 10 pF should be buffered with a series resis-
tor (Rs) to isolate the load capacitance from the
amplifier output A curve of recommended Rs vs
Cload has been included for reference Values of
Rs were chosen to maximize resulting bandwidth
without additionl peaking
Printed-Circuit Layout
As with any high-frequency device good PCB
layout is necessary for optimum performance
Ground-plane construction is highly recommend-
ed as is good power supply bypassing A 1
mF–
10
mF tantalum capacitor is recommended in par-
allel with a 001
mF ceramic capacitor All lead
lengths should be as short as possible and all by-
pass capacitors should be as close to the device
pins as possible Parasitic capacitances should be
kept to an absolute minimum at both inputs and
at the output Resistor values should be kept un-
der 1000
X to 2000X because of the RC time con-
stants associated with the parasitic capacitance
Metal-film and carbon resistors are both accept-
able use of wire-wound resistors is not recom-
mended because of parasitic inductance Similar-
ly capacitors should be low-inductance for best
performance If possible solder the EL2075 di-
rectly to the PC board without a socket Even
high quality sockets add parasitic capacitance
and inductance which can potentially degrade
performance Because of the degradation of AC
performance due to parasitics the use of surface-
mount components (resistors capacitors etc) is
also recommended
9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EL2075 | 2GHz GBWP Gain-of-10 Stable Operational Amplifier |
| EL2075CN | 2GHz GBWP Gain-of-10 Stable Operational Amplifier |
| EL2075CS | 2GHz GBWP Gain-of-10 Stable Operational Amplifier |
| EL2082CJ | Analog Multiplier |
| EL2082J | Analog Multiplier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EL2075CN | 制造商:ELANTEC 制造商全稱:ELANTEC 功能描述:2GHz GBWP Gain-of-10 Stable Operational Amplifier |
| EL2075CS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2GHz GBWP Gain-of-10 Stable Operational Amplifier |
| EL2075J/883B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Voltage-Feedback Operational Amplifier |
| EL207-V | 功能描述:晶體管輸出光電耦合器 Optocouplers RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| EL208 | 功能描述:晶體管輸出光電耦合器 Optocouplers RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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