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參數(shù)資料
| 型號(hào)： | EGP30D-E3/54 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, GP20, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 73K |
| 代理商： | EGP30D-E3/54 |
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Document Number: 88584
Revision: 15-Mar-11
EGP30A thru EGP30G
Vishay General Semiconductor
Note
(1)
Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
EGP30A
EGP30B
EGP30C
EGP30D
EGP30F
EGP30G UNIT
Maximum instantaneous
forward voltage
3.0 A
V
F
0.95
1.25
V
Maximum DC
reverse current at rated
DC blocking voltage
T
A
= 25 °C
I
R
5.0
μA
T
A
= 125 °C
100
Maximum reverse
recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
50
ns
Typical junction
capacitance
4.0 V, 1 MHz
C
J
85
75
pF
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EGP30A
EGP30B
EGP30C
EGP30D
EGP30F
EGP30G UNIT
Typical thermal resistance
R
JA
(1)
20
°C/W
R
JL
(1)
8.0
ORDERING INFORMATION
(Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
EGP30G-E3/54
1.01
54
1400
13" diameter paper tape and reel
EGP30G-E3/73
1.01
73
1000
Ammo pack packaging
EGP30GHE3/54
(1)
1.01
54
1400
13" diameter paper tape and reel
EGP30GHE3/73
(1)
1.01
73
1000
Ammo pack packaging
2.0
3.0
1.0
0
0
25
50
75
100
125
150
175
A
Ambient Temperature (°C)
Re
s
i
s
tive or Inductive Load
0.375
"
(9.5 mm) Lead Length
1
10
100
0
25
50
75
100
125
150
175
Number of Cycle
s
at 60 Hz
P
S
u
T
= T
Max.
8.3 m
s
S
ingle Half
S
ine-Wave
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|---|---|
| EGP30DHE3/54 | 功能描述:整流器 200 Volt 3.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| EGP30DHE3/73 | 功能描述:整流器 200 Volt 3.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| EGP30DT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Ultrafast Recovery Rectifiers |
| EGP30D-TP | 功能描述:DIODE GPP 3A 200V HI EFF DO201AE RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間(trr):300ns 電流 - 在 Vr 時(shí)反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| EGP30DZ | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:HIGH EFFICIENCY RECTIFIER |
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