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參數(shù)資料
| 型號(hào)： | EGP10M |
| 廠商： | 智威科技股份有限公司 |
| 英文描述： | SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER |
| 中文描述： | 燒結(jié)玻璃鈍化結(jié)高效整流 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 36K |
| 代理商： | EGP10M |
E
EPG10A - EPG10K, Rev. A
EGP10A - EGP10K
1.0 Ampere Glass Passivated High Efficiency Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
.375 " lead length @ T
L
= 55
°
C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
Storage Temperature Range
Operating Junction Temperature
1.0
A
i
f(surge)
30
A
P
D
2.5
17
50
W
mW/
°
C
°
C/W
°
C
°
C
R
θ
JA
T
stg
T
J
-65 to +150
-65 to +150
1999 Fairchild Semiconductor Corporation
Features
Superfast recovery time for high
efficiency.
Low forward voltage, high current
capability.
Low leakage current.
High surge current capability.
Parameter
Device
Units
10A
50
35
50
10B
100
70
100
10C
150
105
150
10D
200
140
200
10F
300
210
300
10G
400
280
400
10J
600
420
600
10K
800
560
800
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
V
V
V
DC Reverse Voltage (Rated V
R
)
Maximum Reverse Current
@ rated V
R
T
A
= 25
°
C
T
A
= 125
°
C
5.0
100
μ
A
μ
A
nS
Maximum Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Maximum Forward Voltage @ 1.0 A
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
50
75
0.95
22
1.25
1.7
V
pF
15
DO-41
COLOR BAND DENOTES CATHODE
1.0 min
(25.4)
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
0.205 (5.21)
0.160 (4.06)
Dimensions in
inches (mm)
Discrete POWE R & Signal
Technologies
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| EGP15D | 制造商:ZOWIE 制造商全稱:Zowie Technology Corporation 功能描述:SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER |
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