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參數(shù)資料
| 型號(hào)： | EFA080A-100F |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Low Distortion GaAs Power FET |
| 中文描述： | 低失真GaAs功率場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | EFA080A-100F |
'LD
5DG
7<3
7<3
*
'
Excelics
EFA080A-100F
DATA SHEET
Low Distortion GaAs Power FET
HERMETIC 100mil CERAMIC FLANGE PACKAGE
+26.0dBm TYPICAL OUTPUT POWER
7.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 800 MICRON RECESSED “MUSHROOM”
GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz
MIN
TYP
MAX
UNIT
P
1dB
24.0
26.0
dBm
G
1dB
6.0
7.5
dB
PAE
32
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
130
210
300
mA
Gm
Transconductance Vds=3V, Vgs=0V
90
120
mS
Vp
Pinch-off Voltage Vds=3V, Ids=2.0mA
-2.0
-3.5
V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-7
-14
V
Rth
Thermal Resistance
58*
o
C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Ids
Drain Current
Igsf
Forward Gate Current
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
Pt
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
ABSOLUTE
1
12V
-8V
Idss
20mA
25dBm
175
o
C
-65/175
o
C
2.5 W
CONTINUOUS
2
8V
-4V
250mA
4mA
@ 3dB Compression
150
o
C
-65/150
o
C
2.0W
All Dimensions In mils
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