參數(shù)資料
型號(hào)： EDX5116ABSE-3A-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 512M bits XDR DRAM (32M words ?16 bits)
中文描述： 32M X 16 RAMBUS, PBGA104
封裝： LEAD FREE, FBGA-104
文件頁(yè)數(shù)： 35/78頁(yè)
文件大?。?/td> 3611K
代理商： EDX5116ABSE-3A-E
Preliminary Data Sheet E0643E30 (Ver. 3.0)
35
EDX5116ABSE
Figure 18
Configuration (CFG) Register
Figure 19
Power Management (PM) Register
Figure 20
Write Data S erial Load (WDS L) Control Register
7
6
5
4
3
2
WIDTH[2:0]
1
0
Read/write register
CFG[7:0] resets to 00000100
2
rsrv
WIDTH[2:0] - Device interface width field.
000
2
- Reserved.
001
2
- Reserved
010
2
- x4 device width
011
2
- x8 device width
100
2
- x16 device width
101
2
, 110
2
, 111
2
- Reserved
SLE - Serial Load enable field.
0
2
- WDSL-path-to-memory disabled
1
2
- WDSL-path-to-memory enabled
Configuration Register
SADR[7:0]: 00000010
2
rsrv
SLE
rsrv
7
6
5
4
3
2
1
0
Read/write register
PM[7:0] resets to 00000000
2
PX
reserved
PX - Powerdown exit field.(write-one-only, read=zero)
0
2
- Powerdown entry - do not write zero - use PDN command
1
2
- Powerdown exit - write one to exit
PST[1:0] - Power state field (read-only).
00
2
- Powerdown (with self-refresh)
01
2
- Active/active-idle
10
2
- reserved
11
2
- reserved
PST[1:0]
Power Management Register
SADR[7:0]: 00000011
2
7
6
5
4
3
2
1
0
Read/write register
WDSL[7:0] resets to 00000000
2
WDSD[7:0] - Writing to this register places eight bits of data into
the serial-to-parallel conversion logic (the “Demux” block of
Figure 2). Writing to this register “2x16” times accumulates a full
“t
CC
” worth of write data. A subsequent WR command (with
SLE=1 in CFG register in Figure 32) will write this data (rather
than DQ data) to the sense amps of a memory bank. The shifting
order of the write data is shown in Table 10.
Write Data Serial Load Control Register
SADR[7:0]: 00000100
2
WDSD[7:0]
相關(guān)PDF資料
PDF描述
EDX5116ABSE 512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE-3C-E 512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE-4C-E 512M bits XDR DRAM (32M words ?16 bits)
EDX5116ADSE 512M bits XDR⑩ DRAM
EDX5116ADSE-3B-E 512M bits XDR⑩ DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDX5116ABSE-3B-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE-3C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR DRAM (32M words ?16 bits)
EDX5116ABSE-4C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR DRAM (32M words ?16 bits)
EDX5116ACSE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR? DRAM
EDX5116ACSE-3A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR? DRAM
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