參數(shù)資料
型號: EDS2532EEBH-75
廠商: Elpida Memory, Inc.
英文描述: 256M bits SDRAM (8M words x 32 bits)
中文描述: 256M位的SDRAM(800萬字× 32位)
文件頁數(shù): 21/48頁
文件大?。?/td> 578K
代理商: EDS2532EEBH-75
EDS2532CABH
Data Sheet E0395E40 (Ver. 4.0)
21
A2
A1
A0
Addressing(decimal)
Sequential
0, 1, 2, 3, 4, 5, 6, 7,
1, 2, 3, 4, 5, 6, 7,
2, 3, 4, 5, 6, 7,
3, 4, 5, 6, 7,
4, 5, 6, 7,
5, 6, 7,
6, 7,
7,
0, 1, 2, 3, 4, 5, 6,
0
0
0
0
1
1
0
0
1
1
0
0
0
1
0
1
0
1
1
1
1
Interleave
0, 1, 2, 3, 4, 5, 6, 7,
1, 0, 3, 2, 5, 4, 7,
2, 3, 0, 1, 6, 7,
3, 2, 1, 0, 7,
4, 5, 6, 7,
5, 4, 7,
6, 7,
7,
6, 5, 4, 3, 2, 1, 0,
1
1
0
Starting Ad.
0,
0, 1,
0, 1, 2,
0, 1, 2, 3,
0, 1, 2, 3, 4,
0, 1, 2, 3, 4, 5,
6,
4, 5,
6, 5, 4,
0, 1, 2, 3,
6, 1, 0, 3, 2,
4, 5, 2, 3, 0, 1,
Burst length = 8
A1
A0
Addressing(decimal)
Sequential
0, 1, 2, 3,
1, 2, 3, 0,
2, 3, 0, 1,
3, 0, 1, 2,
0
0
1
1
0
1
0
1
Interleave
0, 1, 2, 3,
1, 0, 3, 2,
2, 3, 0, 1,
3, 2, 1, 0,
Starting Ad.
Burst length = 4
A0
Addressing(decimal)
Sequential
0, 1,
1, 0,
0
1
Interleave
0, 1,
1, 0,
Starting Ad.
Burst length = 2
Burst Sequence
Full page burst is available only for sequential addressing. The addressing sequence is started from the column
address that is asserted by read/write command. And the address is increased one by one.
It is back to the address 0 when the address reaches at the end of address 511. “Full page burst” stops the burst
read/write with burst stop command.
相關(guān)PDF資料
PDF描述
EDS2532EEBH-75-E 256M bits SDRAM (8M words x 32 bits)
EDS2532AABJ-75 256M bits SDRAM (8M words ?32 bits)
EDS2532AABJ-75-E 256M bits SDRAM (8M words ?32 bits)
EDS2532AABJ-75L-E 256M bits SDRAM (8M words ?32 bits)
EDS2532JEBH-75 256M bits SDRAM (8M words x 32 bits)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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