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參數(shù)資料
| 型號(hào)： | EDS2532EEBH-75-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 256M bits SDRAM (8M words x 32 bits) |
| 中文描述： | 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 |
| 封裝： | ROHS COMPLIANT, FBGA-90 |
| 文件頁數(shù)： | 4/48頁 |
| 文件大?。?/td> | 578K |
| 代理商： | EDS2532EEBH-75-E |
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EDS2532CABH
Data Sheet E0395E40 (Ver. 4.0)
4
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up, execute power up sequence and initialization sequence before proper device operation is achieved
(refer to the Power up sequence).
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Note
Voltage on any pin relative to VSS
VT
–0.5 to +3.6
V
Supply voltage relative to VSS
VDD
–0.5 to +3.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating ambient temperature
TA
0 to +70
°
C
°
C
Storage temperature
Tstg
–55 to +125
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (TA = 0 to +70
°
C)
Parameter
Symbol
min.
max.
Unit
Notes
Supply voltage
VDD, VDDQ
2.3
2.7
V
1
VSS, VSSQ
0
0
V
2
Input high voltage
VIH
1.7
VDD + 0.3
V
3
Input low voltage
VIL
–0.3
0.7
V
4
Notes: 1. The supply voltage with all VDD
and VDDQ pins must be on the same level.
2. The supply voltage with all VSS and VSSQ pins must be on the same level.
3. VIH (max.) = VDD + 1.5V (pulse width
≤
5ns).
4. VIL (min.) = VSS – 1.5V (pulse width
≤
5ns).
相關(guān)PDF資料 |
PDF描述 |
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| EDS2532AABJ-75 | 256M bits SDRAM (8M words ?32 bits) |
| EDS2532AABJ-75-E | 256M bits SDRAM (8M words ?32 bits) |
| EDS2532AABJ-75L-E | 256M bits SDRAM (8M words ?32 bits) |
| EDS2532JEBH-75 | 256M bits SDRAM (8M words x 32 bits) |
| EDS2532JEBH-75-E | 256M bits SDRAM (8M words x 32 bits) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDS2532EEBH-75TT | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM WTR (Wide Temperature Range) |
| EDS2532EEBH-75TT-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM WTR (Wide Temperature Range) |
| EDS2532EEBH-9A | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM (8M words x 32 bits) |
| EDS2532EEBH-9A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM (8M words x 32 bits) |
| EDS2532EEBH-9ATT | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM WTR (Wide Temperature Range) |
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