參數(shù)資料
型號(hào): EDS2532AABH-75L-E
廠(chǎng)商: ELPIDA MEMORY INC
元件分類(lèi): DRAM
英文描述: GT 47C 7#12 40#16 SKT PLUG
中文描述: 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
封裝: LEAD FREE, FBGA-90
文件頁(yè)數(shù): 26/48頁(yè)
文件大小: 578K
代理商: EDS2532AABH-75L-E
EDS2532CABH
Data Sheet E0395E40 (Ver. 4.0)
26
CLK
Command
DQ
l
DAL
l
RAS
ACT
WRITA
in
ACT
Note: Internal auto-precharge starts at the timing indicated by " ".
and an interval of tRAS (
l
RAS) is required between previous active (ACT) command
and internal precharge " ".
Single Write
相關(guān)PDF資料
PDF描述
EDS2532CABH-75L-E 256M bits SDRAM (8M words x 32 bits)
EDS2532EEBH-75 256M bits SDRAM (8M words x 32 bits)
EDS2532EEBH-75-E 256M bits SDRAM (8M words x 32 bits)
EDS2532AABJ-75 256M bits SDRAM (8M words ?32 bits)
EDS2532AABJ-75-E 256M bits SDRAM (8M words ?32 bits)
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