參數(shù)資料
型號(hào): EDS2516APTA-75TI-E
廠(chǎng)商: ELPIDA MEMORY INC
元件分類(lèi): DRAM
英文描述: 256M bits SDRAM WTR (Wide Temperature Range)
中文描述: 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: LEAD FREE, PLASTIC, TSOP2-54
文件頁(yè)數(shù): 5/52頁(yè)
文件大小: 720K
代理商: EDS2516APTA-75TI-E
EDS2516APTA-TI-E
Data Sheet E0677E10 (Ver. 1.0)
5
DC Characteristics 1 (TA = –40 to +85
°
C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V)
Parameter
/CAS latency
Symbol
Grade
max.
Unit
Test condition
Notes
Operating current
ICC1
115
mA
Burst length = 1
tRC = tRC (min.)
1, 2, 3
Standby current in power down
ICC2P
3
mA
CKE = VIL, tCK = tCK (min.) 6
Standby current in power down
(input signal stable)
ICC2PS
2
mA
CKE = VIL, tCK =
7
Standby current in non power down
ICC2N
20
mA
CKE, /CS = VIH,
tCK = tCK (min.).
CKE = VIH, tCK =
,
/CS = VIH
4
Standby current in non power down
(input signal stable)
ICC2NS
9
mA
8
Active standby current in power down
ICC3P
4
mA
CKE = VIL, tCK = tCK (min.) 1, 2, 6
Active standby current in power down
(input signal stable)
Active standby current in non power
down
Active standby current in non power
down (input signal stable)
ICC3PS
3
mA
CKE = VIL, tCK =
2, 7
ICC3N
30
mA
CKE, /CS = VIH,
tCK (min.)
CKE = VIH, tCK =
,
/CS = VIH
1, 2, 4
ICC3NS
15
mA
2, 8
Burst operating current
ICC4
145
mA
tCK = tCK (min.), BL = 4
1, 2, 5
Refresh current
ICC5
220
mA
tRC = tRC (min.)
3
Self refresh current
ICC6
3
mA
VIH
VDD – 0.2V
VIL
0.2V
Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output
open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CLK operating current.
7. After power down mode, no CLK operating current.
8. Input signals are VIH or VIL fixed.
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