參數(shù)資料
型號(hào)： EDS1232AASE
廠商： Elpida Memory, Inc.
英文描述： 26481083
中文描述： 128兆位的SDRAM（4分字× 32位）
文件頁(yè)數(shù)： 5/55頁(yè)
文件大?。?/td> 564K
代理商： EDS1232AASE
EDS1232CABB, EDS1232CATA
Preliminary Data Sheet E0247E40 (Ver. 4.0)
5
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up (refer to the Power up sequence).
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Note
Voltage on any pin relative to VSS
VT
–0.5 to +3.6
V
Supply voltage relative to VSS
VDD, VDDQ
–0.5 to +3.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating ambient temperature
TA
0 to +70
°
C
°
C
Storage temperature
Tstg
–55 to +125
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions (TA = 0 to +70
°
C)
Parameter
Symbol
min.
typ.
max.
Unit
Notes
Supply voltage
VDD, VDDQ 2.3
2.5
2.7
V
VSS
0
0
0
VDD + 0.3*
1
V
Input high voltage
VIH
1.7
V
Input low voltage
Notes: 1. VIH (max.) = VDDQ + 1.5V (pulse width
≤
5ns).
2. VIL (min.) = –1.5V (pulse width
≤
5ns).
VIL
–0.3
0.7
V
相關(guān)PDF資料
PDF描述
EDS1232AATA 128M bits SDRAM
EDS1232AATA-60 128M bits SDRAM
EDS1232AATA-60-E 128M bits SDRAM (4M words x 32 bits)
EDS1232AATA-60L 128M bits SDRAM
EDS1232AATA-60L-E 128M bits SDRAM (4M words x 32 bits)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDS1232AASE-60-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM (4M words x 32 bits)
EDS1232AASE-60L-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM (4M words x 32 bits)
EDS1232AASE-75-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM (4M words x 32 bits)
EDS1232AASE-75L-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM (4M words x 32 bits)
EDS1232AATA 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM
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