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參數(shù)資料
| 型號： | EDS1232AABB-60L |
| 英文描述： | Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 24-QFN T&R |
| 中文描述： | 內(nèi)存| 4X1MX32 |的CMOS | BGA封裝| 90PIN |塑料 |
| 文件頁數(shù)： | 5/55頁 |
| 文件大小： | 570K |
| 代理商： | EDS1232AABB-60L |
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EDS1232AABB, EDS1232AATA
Data Sheet E0205E30 (Ver. 3.0)
13
Precharge command (/CS, /RAS, /WE = Low, /CAS = High)
This command begins precharge operation of the bank selected by BA0 and BA1. When A10 is High, all banks are
precharged, regardless of BA0 and BA1. When A10 is Low, only the bank selected by BA0 and BA1 is precharged.
After this command, the Synchronous DRAM can’t accept the activate command to the precharging bank during tRP
(precharge to activate command period). This command corresponds to a conventional DRAM’s /RAS rising.
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0, BA1
(Bank select)
(Precharge select)
Precharge Command
Write command (/CS, /CAS, /WE = Low, /RAS = High)
If the mode register is in the burst write mode, this command sets the burst start address given by the column
address to begin the burst write operation. The first write data in burst mode can input with this command with
subsequent data on following clocks.
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0, BA1
(Bank select)
Col.
Column Address and Write Command
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDS1232AABB-60L-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM |
| EDS1232AABB-75 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X1MX32|CMOS|BGA|90PIN|PLASTIC |
| EDS1232AABB-75-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM |
| EDS1232AABB-75L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X1MX32|CMOS|BGA|90PIN|PLASTIC |
| EDS1232AABB-75L-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM |
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