參數(shù)資料
型號: EDI8L3265C
英文描述: 64Kx32 CMOS High Speed Static RAM(64Kx32高速CMOS靜態(tài)RAM)
中文描述: 64Kx32的CMOS高速靜態(tài)隨機(jī)存儲器(64Kx32高速的CMOS靜態(tài)RAM)的
文件頁數(shù): 2/6頁
文件大?。?/td> 101K
代理商: EDI8L3265C
2
EDI8L3265C Rev. 4 3/97 ECO#8302
EDI8L3265C
64Kx32 SRAM
Absolute Maximum Ratings*
Recommended DC Operating Conditions
Parameter
Sym
Min
Typ
Max Units
Supply Voltage
VCC
4.75
5.0
5.25
V
Supply Voltage
VSS
0
V
Input High Voltage
VIH
2.2
-- VCC+0.5 V
Input Low Voltage
VIL
-0.3
--
0.8
V
Voltage on any pin relative to VSS
-0.5V to 7.0V
Operating Temperature TA (Ambient)
Commercial
0°C to + 70°C
Industrial
-40°C to +85°C
Storage Temperature
-55°C to +125°C
Power Dissipation
3.0 Watts
Output Current.
20 mA
Junction Temperature, TJ
175°C
AC Test Conditions
(note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF)
Input Pulse Levels
VSS to 3.0V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
1.5V
Output Load
Figure 1
DC Electrical Characteristics
Parameter
Sym
Conditions
Min
Max
Units
12ns* 15ns 20/25ns
ns
Operating Power
ICC1
W= VIL, II/O = 0mA,
500
460
420
mA
Supply Current
Min Cycle
Standby (TTL)
ICC2
E
≥ VIH, VIN ≤ VIL or
60
mA
Supply Current
VIN
≥ VIH, f=MHz
Full Standby
ICC3
E
≥ VCC-0.2V
20
mA
Supply Current CMOS
VIN
≥ VCC-0.2V or VIN ≤ 0.2V
Input Leakage Current
ILI
VIN = 0V to VCC
±10
A
Output Leakage Current
ILO
V I/O = 0V to VCC
±10
A
Output High Volltage
VOH
IOH = -4.0mA
2.4
V
Output Low Voltage
VOL
IOL = 8.0mA
0.4
V
Capacitance
Truth Table
(f=1.0MHz, VIN=VCC or VSS)
Parameter
Sym
Max
Unit
Address Lines
CA
20
pF
Data Lines
CD/Q
10
pF
Write & Output
W, G
16
pF
Enable Lines
bF
Chip Enable Lines
E, BS
9
pF
These parameters are sampled, not 100% tested.
E
W
G BS-3
Mode
Output
Power
H
X
Standby
High Z
ICC2,ICC3
L
H
X Output Disable High Z
ICC1
L
X
H Output Disable High Z
ICC1
L
H
L
Read
Dout
ICC1
L
X
L
Write
Din
ICC1
*Typical: TA = 25°C, VCC = 5.0V
*Advanced Information
X Means Don't Care
Figure 1
Figure 2
255
VCC
5 pF
480
Q
255
VCC
50 pF
480
Q
*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
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