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參數(shù)資料
| 型號(hào)： | EDI8L32128C |
| 英文描述： | 128Kx32 CMOS High Speed SRAM(128Kx32高速CMOS靜態(tài)RAM) |
| 中文描述： | 128Kx32的CMOS高速靜態(tài)存儲(chǔ)器（128Kx32高速的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 87K |
| 代理商： | EDI8L32128C |
2
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
EDI8L32128C
December 2000 Rev. 5
ECO #13525
ABSOLUTE MAXIMUM RATINGS*
RECOMMENDED DC OPERATING CONDITIONS
*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE
(f = 1.0MHz, VIN = VCC or VSS)
30pF
480
Vcc
Q
Figure 2
Figure 3
255
5pF
480
Vcc
Q
255
AC TEST CONDITIONS
DC ELECTRICAL CHARACTERISTICS
Voltage on any pin relative to VSS
-0.5V to 7.0V
Operating Temperature TA (Ambient)
Commercial
0
°C to + 70°C
Industrial
-40
°C to +85°C
Storage Temperature
-55
°C to +125°C
Power Dissipation
4 Watts
Output Current.
20 mA
Junction Temperature, TJ
175
°C
Parameter
Sym
Min
Typ
Max
Units
Supply Voltage
VCC
4.75
5.0
5.25
V
Supply Voltage
VSS
00
0
V
Input High Voltage
VIH
2.2
--
VCC+0.5
V
Input Low Voltage
VIL
-0.3
--
0.8
V
Parameter
Sym
Max
Unit
Address Lines
CA
40
pF
Data Lines
CD/Q
10
pF
Write & Output Enable Lines
W, G
40
pF
Chip Enable Lines/Byte Select
E0-3
8pF
TRUTH TABLE
E
W
G
Mode
Output
Power
H
X
Standby
High Z
ICC2,ICC3,
L
H
Output Disable
High Z
ICC1
L
X
Output Disable
High Z
ICC1
L
H
L
Read
DOUT
ICC1
L
X
Write
DIN
ICC1
Parameter
Sym
Conditions
Typ
Max
Units
12*
15
17
20/25
Operating Power Supply Current
ICC1
W= VIL, II/O = 0mA,
620
720
680
640
600
mA
Min Cycle
Standby (TTL) Supply Current
ICC2
E
≥ VIH, VIN ≤ VIL or
160
mA
VIN
≥ VIH, f = MHz
Full Standby CMOS Supply Current
ICC3
E
≥ VCC -0.2V
20
VIN
≥ VCC -0.2V or
20
mA
VIN
≤ 0.2V
Input Leakage Current
ILI
VIN = 0V to VCC
±10
A
Output Leakage Current
ILO
V I/O = 0V to VCC
±10
A
Output High Volltage
VOH
IOH = -4.0mA
2.4
V
Output Low Voltage
VOL
IOL = 8.0mA
0.4
V
Input Pulse Levels
VSS to 3.0V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
1.5V
Output Load
Figure 2
NOTE: For tEHQZ, tGHQZ and tWLQZ, CL = 5pF Figure 3)
Typical: TA = 25
°C, VCC = 5.0V
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