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參數(shù)資料
| 型號： | EDI7P080FLF0204C25 |
| 英文描述： | 1GHz Current Feedback Amplifier with Enable; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 121K |
| 代理商： | EDI7P080FLF0204C25 |
August 2000 Rev. 3 - ECO #13127
5
PCMCIA Flash Memory Card
FLC Series
PC Card Products
Absolute Maximum Ratings(1)
Operating Temperature TA (ambient)
Commercial
0°C to +60 °C
Industrial
-40°C to +85 °C
Storage Temperature
Commercial
-30°C to +80 °C
Industrial
-40°C to +85 °C
Voltage on any pin relative to VSS
-0.5V to VCC+0.5V
VCC supply Voltage relative to VSS
-0.5V to +7.0V
Note:
(1) Stress greater than those listed under
“Absolute Maximum Ratings” may cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than
those indicated in the operational sections of
this specification is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
Symbol Parameter
Density
Notes
Typ
(2)
Max
Units Test Conditions
ICCR
VCC Read Current
All
45
mA
VCC = VCCmax
tcycle = 150ns,CMOS levels
ICCW
VCC Program Current
All
65
mA
Programming in Progress
ICCE
VCC Erase Current
All
65
mA
Erasure in Progress
1MB
0.015
0.7
2MB
0.015
0.9
4MB
0.015
1.3
ICCS
(CMOS)
VCC Standby Current
10MB
0.015
2.5
mA
VCC = VCCmax
Control Signals = VCC
CMOS levels
Notes:
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Byte wide operations.
For 16 bit operation values are double.
2. Typical: VCC = 5V, T = +25C
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
DC Characteristics(1)
Symbol
Parameter
Notes
Min
Max
Units
Test Conditions
ILI
Input Leakage Current
1
±20
A
VCC = VCCMAX
Vin =VCC or VSS
ILO
Output Leakage Current
1
±20
A
VCC = VCCMAX
Vout =VCC or VSS
VIL
Input Low Voltage
1
0
0.8
V
VIH
Input High Voltage
1
0.7VCC
VCC+0.5
V
VOL
Output Low Voltage
1
0.4
V
IOL = 3.2mA
VOH
Output High Voltage
1
VCC-0.4
VCC
V
IOH = -2.0mA
VLKO
VCC Erase/Program
Lock Voltage
13.2
4.2
V
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 A when VIN = GND
due to internal pull-up resistors.
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| EDI7P080FLF0205C20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| EDI7P080FLF0205C25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| EDI816256CA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256Kx16 MONOLITHIC SRAM, SMD 5962-96795 |
| EDI816256CA/LPA-F44 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM |
| EDI816256CA/LPA-N44 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM |
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