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參數(shù)資料
| 型號(hào)： | EDI74341MV-BNC |
| 英文描述： | General Purpose High Current NPN Transistor Array; Temperature Range: -55°C to 125°C; Package: 16-PDIP |
| 中文描述： | 英特爾/夏普閃存模塊 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 120K |
| 代理商： | EDI74341MV-BNC |
1
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
EDI7F4341MV
May 2001 Rev. 1
ECO #14175
4 x 1 Meg x 32
Based on Intel's E28F008S3 Flash Device
Fast Read Access Time - 120ns
Flexible Smart Voltage
2.7-3.6V Program Erase
2.7-3.6V Read Operation
12Vpp Fast Production Programming
Low Power Dissipation
30mA per Device Active Current
20A per Device CMOS Standby Current
Typical Endurance >100,000 Cycles
Single 3.0 Volt -10% +20% Supply
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Range
Package
80 Pin SIMM (JEDEC
The EDI7F4341MV is organized as four banks of 1 Meg x 32. The
module is based on Intel's E28F008S3 - 1 Meg x 8 Flash device
in TSOP packages which are mounted on an FR4 substrate.
The module offers access times between 120 and 150ns allowing
for operation of high-speed microprocessors without wait states.
DESCRIPTION
4 x 1 MEG x 32 FLASH MODULE
FEATURES
EDI7F434IMV-BNC: 4 x1 MEG x 32 80 PIN SIMM
BLOCK DIAGRAM
FIG. 1
G\
W0\
W1\
W2\
W3\
DQ0-DQ7
E0\
E1\
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
E2\
E3\
1Mx8
A0-A19
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