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參數(shù)資料
| 型號： | EDI2GG41864V11D |
| 英文描述： | 4x64Kx18 3.3V Synchronous SRAM Card Module(4x64Kx18, 3.3V，11ns,同步靜態(tài)RAM卡模塊(流通結(jié)構(gòu)）) |
| 中文描述： | 4x64Kx18 3.3同步SRAM卡模塊（4x64Kx18，3.3伏，11ns，同步靜態(tài)內(nèi)存卡模塊（流通結(jié)構(gòu)）） |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 1529K |
| 代理商： | EDI2GG41864V11D |
5
EDI2GG41864V
White Electronic Designs Corporation Westborough, MA 01581
(508) 366-5151 www.whiteedc.com
July1999 Rev
ECO
DC ELECTRICAL CHARACTERISTICS - READ CYCLE
RECOMMENDED DC OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS*
AC TEST CONDITIONS
AC TEST LOAD
SYNCHRONOUS ONLY - TRUTH TABLE
*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those
indicated in operational sections of this specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Voltage on Vcc Relative to Vss
-0.5V to +4.6V
Vin
-0.5V to Vcc +0.5V
Storage Temperature
-55°C to +125°C
Operating Temperature (Commercial) 0°C to +70°C
Operating Temperature (Industrial)
-40°C to +85°C
Short Circuit Output Current
20 mA
Operation
E1\
E2\
E3\
E4\
GW\
G\
CLK
DQ
Synchronous Write-Bank 1
L
H
L
H
High-Z
Synchronous Read-Bank 1
L
H
L
Synchronous Write-Bank 2
H
L
H
L
H
High-Z
Synchronous Read-Bank 2
H
L
H
L
Synchronous Write-Bank 3
H
L
H
L
H
High-Z
Synchronous Read-Bank 3
H
L
H
L
Synchronous Write-Bank 4
H
L
H
High-Z
Synchronous Read-Bank 4
H
L
H
L
Max
Description
SYM
Typ
9.5 10
11
12
15 Units
Power Supply Current
Icc1
380
*
450 400 375 350
mA
Power Supply Current
Icc
100
*
200 200 225 225
mA
Device Selected,No Operation
Snooze Mode
IccZZ
10
*
15
mA
CMOS Standby
Icc3
20
*
35
mA
Clock Running-Deselect IccK
300
*
400 400 300 300
mA
Parameter
Sym Min Typ
Max Units
SupplyVoltage
VCC 3.14 3.3
3.6
V
SupplyVoltage
VSS 0.0
0.0
V
InputHigh
VIH
2.2
3.0 VCC+0.3 V
InputLow
VIL
-0.3 0.0
0.8
V
InputLeakage
ILi
-2
1
2
A
Output Leakage
ILo
-2
1
2
A
Output High
VOH 2.4
-
V
IOH=-4mA
Output Low
VOL
-
0.4
V
IOL =+8mA
Input Pulse Levels
Vss to 3.0V
Input and Output Timing Ref.
1.25V
Output Test equivalencies
DQ
Z
0 = 50
Fig. 1 Output Load Equivalent
Vt = 1.25V
50
*TBD
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