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參數(shù)資料
| 型號(hào)： | EDI2GG418128V11D |
| 英文描述： | 4x128Kx18, 3.3V Synchronous Flow-Through SRAM Card Module(4x128Kx18, 3.3V，11ns,同步靜態(tài)RAM卡模塊(流通結(jié)構(gòu)）) |
| 中文描述： | 4x128Kx18，3.3V的同步流通過(guò)的SRAM卡模塊（4x128Kx18，3.3伏，11ns，同步靜態(tài)內(nèi)存卡模塊（流通結(jié)構(gòu)）） |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 218K |
| 代理商： | EDI2GG418128V11D |
4
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
EDI2GG418128V
Parameter
Sym
Min
Typ
Max
Units
Supply Voltage
VCC
3.14
3.3
3.6
V
Supply Voltage
VSS
0.0
V
Input High
VIH
2.2
3.0
VCC+0.3
V
Input Low
VIL
-0.3
0.0
0.8
V
Input Leakage
ILi
-2
1
2
mA
Output Leakage
ILo
-2
1
2
mA
Output High
VOH
2.4
-
V
IOH = -4mA
Output Low
VOL
-
0.4
V
IOL = 8mA
RECOMMENDED DC OPERATING CONDITIONS
SYNCHRONOUS ONLY - TRUTH TABLE
Operation
E1\
E2\
E3\
E4\
GW\
G\
CLK
DQ
Synchronous Write-Bank 1
L
H
L
H
↑
High-Z
Synchronous Read-Bank 1
L
H
L
↑
Synchronous Write-Bank 2
H
L
H
L
H
↑
High-Z
Synchronous Read-Bank 2
H
L
H
L
↑
Synchronous Write-Bank 3
H
L
H
L
H
↑
High-Z
Synchronous Read-Bank 3
H
L
H
L
↑
Synchronous Write-Bank 4
H
L
H
↑
High-Z
Synchronous Read-Bank 4
H
L
H
L
↑
Snooze Mode
X
XXXX
High-Z
*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those indicated
in operational sections of this specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Relative to Vss
-0.5V to +4.6V
Vin
-0.5V to Vcc +0.5V
Storage Temperature
-55
°C to +125°C
Operating Temperature (Commercial)
0
°C to +70°C
Operating Temperature (Industrial)
-40
°C to +85°C
Short Circuit Output Current
20mA
Max
Description
SYM
Typ
9.5
10
11
12
15
Units
Power Supply Current
Icc1
90
*
470
420
395
370
mA
Power Supply Current
Icc
100
*
200
225
mA
Device Selected,No Operation
Snooze Mode
IccZZ
10
*
15
mA
CMOS Standby
Icc3
20
*
35
mA
Clock Running-Deselect
IccK
300
*
400
300
A
DC ELECTRICAL CHARACTERISTICS - READ CYCLE
*TBD
AC TEST CIRCUIT
50
Vt = 1.5V
Output
Z0 = 50
Z0 = 50
AC TEST CONDITIONS
Parameter
I/O
Unit
Input Pulse Levels
Vss to 3.0
V
Input and Output Timing Ref.
1.25
V
Output Test equivalencies
See figure, at left
AC Output Load Equivalent
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| EDI2GG41864V11D | 4x64Kx18 3.3V Synchronous SRAM Card Module(4x64Kx18, 3.3V，11ns,同步靜態(tài)RAM卡模塊(流通結(jié)構(gòu)）) |
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| EDI2GG464128V | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:4MB SYNCHRONOUS CARD EDGE DIMM |
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