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              • 您現(xiàn)在的位置:買(mǎi)賣(mài)IC網(wǎng) > PDF目錄97875 > EDI2CG472128V85D2 4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V,8.5ns,同步/同步脈沖靜態(tài)RAM模塊) PDF資料下載
              參數(shù)資料
              型號(hào): EDI2CG472128V85D2
              英文描述: 4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V,8.5ns,同步/同步脈沖靜態(tài)RAM模塊)
              中文描述: 4x128Kx72,3.3同步/同步突發(fā)靜態(tài)存儲(chǔ)器(4x128Kx72,3.3伏,8.5ns,同步/同步脈沖靜態(tài)內(nèi)存模塊)
              文件頁(yè)數(shù): 7/12頁(yè)
              文件大?。?/td> 354K
              代理商: EDI2CG472128V85D2
              第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)當(dāng)前第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)
              EDI2CG472128V
              4
              White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
              PIN DESCRIPTIONS
              DIMM Pins
              Symbol
              Type
              Description
              2, 87, 4, 89, 7, 92
              A0-16
              Input
              Addresses: These inputs are registered and must meet the setup and hold times around the rising edge of CLK. The
              9, 94, 12, 96, 10
              Synchronous
              burst counter generates internal addresses associated with A0 and A1, during burst and wait cycle.
              93, 8, 91, 5, 88, 3
              107, 106, 23,
              BW1\, BW1\,
              Input
              Byte Write: A byte write is LOW for a WRITE cycle and HIGH for a READ cycle. BW0/ controls DQ0-7 and DQP0, BW1\
              22, 109, 108,
              BW3\, BW4\,
              Synchronous
              controls DQ8-15 and DQP1. BW2\ controls DQ16-23 and DQP2. BW3\ controls DQ24-31 and DQP3. BW4\ controls DQ32-39
              25, 24
              BW5\, BW6\,
              and DQP4. BW5\ controls DQ40-47 and DQP5. BW6\ controls DQ48-55 and DQP6. BW7\ controls DQ56-64 and DQP7.
              BW7\, BW8\
              104
              BWE\
              Input
              Write Enable: This active LOW input gates byte write operations and must meet the setup and hold times around the
              Synchronous
              rising edge of CLK.
              19
              GW\
              Input
              Global Write: This active LOW input allows a full 72-bit WRITE to occur independent of the BWE\ and BWx\ lines and
              Synchronous
              must meet the setup and hold times around the rising edge of CLK.
              101
              CLK
              Input
              Clock: This signal registers the addresses, data, chip enables, write control and burst control inputs on its rising edge.
              Synchronous
              All synchronous inputs must meet setup and hold times around the clock’s rising edge.
              98, 15,
              E1\, E2\
              Input
              Bank Enables: These active LOW inputs are used to enable each individual bank and to gate ADSP\.
              99,14
              E3\, E4\
              Synchronous
              103
              G\
              Input
              Output Enable: This active LOW asynchronous input enables the data output drivers.
              111
              ADV\
              Input
              Address Status Processor: This active LOW input is used to control the internal burst counter. A HIGH on this pin
              Synchronous
              generates wait cycle (no address advance).
              27
              ADSP\
              Input
              Address Status Processor: This active LOW input, along with EL\ and EH\ being LOW, causes a new external
              Synchronous
              address to be registered and a READ cycle is initiated using the new address.
              26
              ADSC\
              Input
              Address Status Controller: This active LOW input causes device to be de-selected or selected along with new
              Synchronous
              external address to be registered. A READ or WRITE cycle is initiated depending upon write control inputs.
              17
              MODE
              Input Static
              Mode: This input selects the burst sequence. A LOW on this pin selects LINEAR BURST. A NC or HIGH on this pin
              selects INTERLEAVED BURST.
              36, 50,
              ZZ1, ZZ2,
              Input
              Snooze: These active HIGH inputs put the individual banks in low power consumption standby mode.
              64, 78
              ZZ3, ZZ4
              Asynchronous
              For normal operation, this input has to be either LOW or NC (no connect).
              Various
              DQ0-63
              Input/Output
              Data Inputs/Outputs: First byte is DQ0-7, second byte is DQ8-15, third byte is DQ16-23, fourth byte is DQ24-31, fifth byte is
              DQ32-39, sixth byte is DQ40-47, seventh byte is DQ48-55 and the eight byte is DQ56-64.
              113, 120, 127,
              DQP0-7
              Input/Output
              Parity Inputs/Outputs: DQP0 is parity bit for DQ0-7. DQP1 is parity bit for DQ8-15. DQP2 is parity bit for DQ16-23. DQP3
              134, 141, 148,
              is parity bit for DQ24-31. DQP4\ is parity bit for DQ32-39. DQP5 is parity bit for DQ40-47. DQP6\ is parity bit for DQ48-55.
              155, 162
              DQP7 is parity bit for DQ56-64 and DQP7. In order to use the device configured as a 128K x 64, the parity bits need to
              be tied to Vss through a 10K ohm resistor.
              Various
              Vcc
              Supply
              Core power supply: +3.3V -5%/+10%
              Various
              Vss
              Ground
              相關(guān)PDF資料
              PDF描述
              EDI2CG472256V10D2 4x256Kx72, 3.3V Synchronous/Synchronous Burst Flow-Through(4x256Kx72, 3.3V,10ns,同步/同步脈沖靜態(tài)RAM模塊(流通結(jié)構(gòu)))
              EDI2CG472256V12D2 4x256Kx72, 3.3V Synchronous/Synchronous Burst Flow-Through(4x256Kx72, 3.3V,12ns,同步/同步脈沖靜態(tài)RAM模塊(流通結(jié)構(gòu)))
              EDI2CG472256V15D2 4x256Kx72, 3.3V Synchronous/Synchronous Burst Flow-Through(4x256Kx72, 3.3V,15ns,同步/同步脈沖靜態(tài)RAM模塊(流通結(jié)構(gòu)))
              EDI2CG472256V9D2 4x256Kx72, 3.3V Synchronous/Synchronous Burst Flow-Through(4x256Kx72, 3.3V,9ns,同步/同步脈沖靜態(tài)RAM模塊(流通結(jié)構(gòu)))
              EDI411024C80FC x1 Fast Page Mode DRAM
              相關(guān)代理商/技術(shù)參數(shù)
              參數(shù)描述
              EDI2CG472128V-D2 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:SSRAM Modules
              EDI2CG472256V 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:8 Megabyte Sync/Sync Burst, Dual Key DIMM
              EDI2CG472256V10D2 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:8 Megabyte Sync/Sync Burst, Dual Key DIMM
              EDI2CG472256V12D2 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:8 Megabyte Sync/Sync Burst, Dual Key DIMM
              EDI2CG472256V15D2 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:8 Megabyte Sync/Sync Burst, Dual Key DIMM
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