參數(shù)資料
型號(hào)： EDE5108AGSE-5C-E
廠商： ELPIDA MEMORY INC
元件分類(lèi)： DRAM
英文描述： 512M bits DDR2 SDRAM
中文描述： 64M X 8 DDR DRAM, 0.5 ns, PBGA60
封裝： ROHS COMPLIANT, FBGA-60
文件頁(yè)數(shù)： 21/66頁(yè)
文件大?。?/td> 697K
代理商： EDE5108AGSE-5C-E
EDE5104ABSE, EDE5108ABSE, EDE5116ABSE
Data Sheet E0323E90 (Ver. 9.0)
21
Current state
/CS
/RAS /CAS /WE
Address
Command
Operation
Continue burst to end
-> Write recovering
Continue burst to end
-> Write recovering
ILLEGAL
Note
Write
H
×
×
×
×
DESL
L
H
H
H
×
NOP
L
H
L
H
BA, CA, A10 (AP)
READ
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
Burst interrupt
1, 4
L
H
L
L
BA, CA, A10 (AP)
WRITA
Burst interrupt
1, 4
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
1
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
Read with
H
×
×
×
×
DESL
Continue burst to end -> Precharging
auto precharge
L
H
H
H
×
NOP
Continue burst to end -> Precharging
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
1
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
Write with auto
Precharge
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
Continue burst to end
->Write recovering with auto precharge
Continue burst to end
->Write recovering with auto precharge
ILLEGAL
H
×
×
×
×
DESL
L
H
H
H
×
NOP
L
H
L
H
BA, CA, A10 (AP)
READ
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
1
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
相關(guān)PDF資料
PDF描述
EDE5104AGSE-6C-E LJT 6C 6#20 SKT RECP
EDE5108AGSE-6C-E LJT 13C 13#22M PIN RECP
EDE5104AGSE-6E-E Circular Connector; No. of Contacts:13; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:11-13 RoHS Compliant: No
EDE5108AGSE-6E-E Circular Connector; No. of Contacts:2; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:11-2 RoHS Compliant: No
EDE5104ABSE-4A-E 512M bits DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE5108AGSE-6C-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AGSE-6E-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AHBG 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AHBG-4A-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108AHBG-5C-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M bits DDR2 SDRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*