參數(shù)資料
型號(hào): EDD2516AETA-5B-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 256M bits DDR SDRAM
中文描述: 16M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝: ROHS COMPLIANT, PLASTIC, TSOP2-66
文件頁數(shù): 22/52頁
文件大?。?/td> 492K
代理商: EDD2516AETA-5B-E
EDD2508AETA, EDD2516AETA
Data Sheet E0859E50 (Ver. 5.0)
22
Auto-refresh command [REF]
This command executes auto-refresh. The banks and the ROW addresses to be refreshed are internally determined
by the internal refresh controller. The average refresh cycle is 7.8
μ
s. The output buffer becomes High-Z after auto-
refresh start. Precharge has been completed automatically after the auto-refresh. The ACT or MRS command can
be issued tRFC
after the last auto-refresh command.
Self-refresh entry [SELF]
This command starts self-refresh. The self-refresh operation continues as long as CKE is held low. During the self-
refresh operation, all ROW addresses are repeated refreshing by the internal refresh controller. A self-refresh is
terminated by a self-refresh exit command.
Power down mode entry [PDEN]
tPDEN (= 1 cycle) after the cycle when [PDEN] is issued. The DDR SDRAM enters into power-down mode. In
power down mode, power consumption is suppressed by deactivating the input initial circuit. Power down mode
continues while CKE is held low. No internal refresh operation occurs during the power down mode. [PDEN] do not
disable DLL.
Self-refresh exit [SELFX]
This command is executed to exit from self-refresh mode. To issue non-read commands, tSNR has to be satisfied.
To issue read command, tSRD has to be satisfied to adjust DOUT timing by DLL. (200 cycles after [SELFX]) After
the exit, input auto-refresh command within 7.8
μ
s.
Power down exit [PDEX]
The DDR SDRAM can exit from power down mode tPDEX (1 cycle min.) after the cycle when [PDEX] is issued.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDD2516AETA-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR SDRAM
EDD2516AETA-6B-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR SDRAM
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EDD2516AKTA 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR SDRAM