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參數(shù)資料
| 型號： | EC2612 |
| 廠商： | United Monolithic Semiconductors |
| 英文描述： | 40GHz Super Low Noise PHEMT |
| 中文描述： | 40GHz的超低噪聲PHEMT器件 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 111K |
| 代理商： | EC2612 |
EC2612
Ref. : DSEC26120077 -17-Marc-00
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
40GHz Super Low Noise PHEMT
Pseudomorphic High Electron Mobility Transistor
Description
The EC2612 is based on a 0.15μm gate
pseudomorphic high electron mobility
transistor (0.15μm PHEMT) technology.
Gate width is 120μm and the 0.15μm
T-shaped aluminium gate features low
resistance and excellent reliability.
The device shows a very high
transconductance which leads to very high
frequency and low noise performances.
It is available in chip form with sources via
holes connection.Only gate and drain wires
bounding are required.
Main Features
|
0.8dB minimum noise figure @ 18GHz
|
1.5dB minimum noise figure @ 40GHz
|
12dB associated gain @ 18GHz
|
9.5dB associated gain @ 40GHz
|
Chip size : 0.63 x 0.37 x 0.1 mm
D: Drain
G: Gate
S: Source
Main Characteristics
Tamb = +25°C
Symbol
Parameter
Min
Typ
Max
Unit
Idss
Saturated drain current
10
40
60
mA
NFmin
Minimum noise figure (F=40GHz)
1.5
1.9
dB
Ga
Associated gain (F=40GHz)
8
9.5
dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Electrical Characteristics
Tamb = +25°C
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