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參數(shù)資料
| 型號： | EC1019C-PCB |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | InGaP HBT Gain Block |
| 中文描述： | InGaP HBT增益模塊 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 316K |
| 代理商： | EC1019C-PCB |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
December 2004
EC1019
InGaP HBT Gain Block
Product Information
The Communications Edge
TM
Typical Device RF Performance
Supply Bias = +6 V, R
bias
= 14
:
, I
cc
= 70 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
20.4
-17
-15
+19.4
+33
3.4
500
20.0
-17
-15
+19.4
+33.2
3.5
900
19.8
-18
-15
+19.4
+33.6
3.5
1900
18
-19
-15
+19.5
+31
3.8
2140
17.5
-20
-15
+19.0
+31
3.8
2400
16.8
-20
-15
+18.8
+30.7
3.9
3500
14.2
-19
-14
+16.2
5800
10.3
-11
-7.7
1. T
est conditions: T = 25o C, Supply Voltage = +6 V, Device Voltage = 5.0 V, Rbias = 16.5 , Icc = 70 mA typical, 50 System.
2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
0
5
10
15
20
25
0
1
2
3
4
5
6
Frequency (GHz)
G
S11, S22 vs. Frequency
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
Frequency (GHz)
S
S22
S11
Icc vs. Vde
0
40
80
120
160
0
1
2
3
4
5
6
Vde (V)
I
25°C
OIP3 vs. Frequency
20
25
30
35
40
500
1000
1500
2000
2500
3000
Frequency (MHz)
O
25°C
85°C
-40°C
Noise Figure vs. Frequency
2
3
4
5
6
500
1000
Frequency (MHz)
1500
2000
N
P1dB vs. Frequency
12
16
20
24
500
1000
1500
2000
2500
3000
Frequency (MHz)
P
25°C
85°C
-40°C
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