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參數(shù)資料
| 型號： | EBE21RD4ABHA-5C-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | GT 7C 7#12 PIN PLUG |
| 中文描述： | 256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 |
| 封裝： | LEAD FREE, DIMM-240 |
| 文件頁數(shù)： | 1/22頁 |
| 文件大?。?/td> | 173K |
| 代理商： | EBE21RD4ABHA-5C-E |
Document No. E0451E20 (Ver. 2.0)
Date Published July 2004 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2004
DATA SHEET
2GB Registered DDR2 SDRAM DIMM
EBE21RD4ABHA
(256M words
×
72 bits, 2 Ranks)
Description
The EBE21RD4ABHA is a 256M words
×
72 bits, 2
ranks DDR2 SDRAM Module, mounting 36 pieces of
512M bits DDR2 SDRAM with sFBGA stacking
technology. Read and write operations are performed
at the cross points of the CK and the /CK. This high-
speed data transfer is realized by the 4bits prefetch-
pipelined architecture. Data strobe (DQS and /DQS)
both for read and write are available for high speed and
reliable data bus design. By setting extended mode
register, the on-chip Delay Locked Loop (DLL) can be
set enable or disable. This module provides high
density mounting without utilizing surface mount
technology. Decoupling capacitors are mounted
beside each SDRAM on the module board.
Note: Do not push the cover or drop the modules in
order to avoid mechanical defects, which may
result in electrical defects.
Features
240-pin socket type dual in line memory module
(DIMM)
PCB height: 30.0mm
Lead pitch: 1.0mm
Lead-free
1.8V power supply
Data rate: 533Mbps/400Mbps (max.)
1.8 V (SSTL_18 compatible) I/O
Double-data-rate architecture: two data transfers per
clock cycle
Bi-directional, data strobe (DQS and /DQS) is
transmitted /received with data, to be used in
capturing data at the receiver
DQS is edge aligned with data for READs; center
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge; data
referenced to both edges of DQS
Four internal banks for concurrent operation
(Components)
Burst length: 4, 8
/CAS latency (CL): 3, 4, 5
Auto precharge option for each burst access
Auto refresh and self refresh modes
7.8
μ
s average periodic refresh interval
Posted CAS by programmable additive latency for
better command and data bus efficiency
Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
/DQS can be disabled for single-ended Data Strobe
operation
1 piece of PLL clock driver, 4 piece of register driver
and 1 piece of serial EEPROM (2k bits EEPROM) for
Presence Detect (PD)
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| EBE21RD4AEFA-5C-E | 2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks) |
| EBE21RD4AGFA-4A-E | 2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks) |
| EBE21RD4AGFA-5C-E | 2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks) |
| EBE21RD4AGFA-6E-E | 2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks) |
| EBE21RD4ABHA | GT 13C 13#16 PIN PLUG |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBE21RD4AEFA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks) |
| EBE21RD4AEFA-4A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks) |
| EBE21RD4AEFA-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks) |
| EBE21RD4AEFA-6 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM |
| EBE21RD4AEFA-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB Registered DDR2 SDRAM DIMM |
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