參數(shù)資料
型號: EBD12RB8ALFB-75
英文描述: SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
中文描述: 內(nèi)存|復(fù)員| 16MX72 |的CMOS |內(nèi)存| 184PIN |塑料
文件頁數(shù): 6/17頁
文件大小: 200K
代理商: EBD12RB8ALFB-75
EBD12RB8ALFB
Data Sheet E0235E10 (Ver. 1.0)
14
Synchronous Characteristics Example
tCK
7.5 ns
10 ns
Symbol
min.
max.
min.
max.
Unit
tCH
3.4
4.1
4.5
5.5
ns
tCL
3.4
4.1
4.5
5.5
ns
tRPRE
6.75
8.25
9
11
ns
tRPST
3
4.5
4
6
ns
tWPRE
0.25
2.5
ns
tWPST
3
4.5
4
6
ns
tDQSS
5.6
9.4
7.5
12.5
ns
tDQSH
2.63
3.5
ns
tDQSL
2.63
3.5
ns
tDSS
1.5
2
ns
tDSH
1.5
2
ns
tWTR
7.5
10
ns
Asynchronous Characteristics
-7A
-75
-1A
Parameter
Symbol
min.
max.
min.
max.
min.
max.
Unit
ACT to REF/ACT command period
(operation)
tRC
65
65
70
ns
REF to REF/ACT command period
(refresh)
tRFC
75
75
80
ns
ACT to PRE command period
tRAS
45
120,000
45
120,000
50
120,000
ns
PRE to ACT command period
tRP
20
20
20
ns
ACT to READ/WRITE delay
tRCD
20
20
20
ns
ACT(one) to ACT(another) command
period
tRRD
15
15
15
ns
Write recovery time
tWR
2
2
2
CLK
Auto precharge write recovery time
+ precharge time
tDAL
TBD
TBD
TBD
ns
Mode register set command cycle time
tMRD
15
15
15
ns
Exit self refresh to command
tXSNR
75
75
80
ns
Average periodic Refresh interval
tREF1
15.6
15.6
15.6
s
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