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參數(shù)資料
| 型號(hào)： | EB04 |
| 廠商： | APEX MICROTECHNOLOGY CORP |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | BRUSHLESS DC MOTOR CONTROLLER, 10 A, DFM24 |
| 封裝： | DIP-24 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大小： | 114K |
| 代理商： | EB04 |
APEX MICROTECHNOLOGY CORPORATION 5980 NORTH SHANNON ROAD TUCSON, ARIZONA 85741 USA APPLICATIONS HOTLINE: 1 (800) 546-2739
4
EB04
OPERATING
CONSIDERATIONS
POWER SUPPLY REQUIREMENTS
SUPPLY
VOLTAGE
MAX CURRENT
HV1
10.8V to 50V
5A, continuous, 10A peak
HV2
10.8V to 50V
5A, continuous, 10A peak
HV3
10.8V to 50V
5A, continuous, 10A peak
Vdd
4.75 – 5.25
105 mA
HV1, HV2, and HV3 may be used independently, or may
be one supply. The Vdd supply must be compatible with
the input logic. If a high voltage logic such as CMOS is
used it may be tied with the Vcc supplies. HCMOS requires
a 5V±10% supply
SPECIAL CONSIDERATIONS
GENERAL
The EB04 is designed to give the user maximum exibility
in a digital or DSP based motion control system. Thermal,
overvoltage, overcurrent, and crossre protection circuits are
part of the user’s design.
Users should read Application Note 1, "General Operating
Considerations;” and Application Note 30, “PWM Basics”
for much useful information in applying this part. These
Application Notes are in the “Power Integrated Circuits Data
Book” and on line at www.apexmicrotech.com.
GROUNDING AND BYPASSING
As in any high power PWM system, grounding and
bypassing are one of the keys to success. The EB04 is
capable of generating 250W pulses with 30 n-second rise and
fall times. If improperly grounded or bypassed this can cause
horrible conducted and radiated EMI.
In order to reduce conducted EMI, the EB04 provides
a separate power ground, named HVRTN, for each high
voltage supply. These grounds are not directly coupled. This
isolation helps minimize high current ground loops. Apex
recommends back to back high current diodes between logic
and power grounds; this will maintain isolation but keep
offset at a safe level. All grounds should tie together at one
common point in the system.
In order to reduce radiated EMI, Apex recommends a 50 F
or larger capacitor between HV and HVRTN. This capacitor
should be a switching power grade electrolytic capacitor
with ESR rated at 20 kHz. This capacitor should be placed
physically as close to the EB04 as possible.
However, such a capacitor will typically have a few
hundred milli-ohms or so ESR. Therefore, each section
must also be bypassed with a low ESR 1F or larger
ceramic capacitor.
In order to minimize radiated noise it is necessary to
minimize the area of the loop containing high frequency
current. (The size of the antenna.) Therefore the 1F ceramic
capacitors should bypass each HV to its return right at
the pins the EB04.
SHOOT THROUGH PROTECTION
Power FETs have a relatively short turn on delay, and a
longer turn off delay. Therefore, turn on delay has been built
in, and turn on signals may be applied simultaneoulsy with the
turn off input to the other FET in that half bridge.
PROTECTION CIRCUITS
The EB04 does not include protection circuits.
However, there is a shut down input which will turn off all
FETs when at logic “1”. This input may be used with user
designed temperature sensing and current sensing circuits
to shut down the FETs in the event of a detected unsafe
condition. This is recommended since the FETs may be
turned off this way even if the normal input logic or DSP
programming is faulty.
HEATSINK
The heatsink for the EB04 should be sized for the
application. When driving a 3-phase motor at 50V, 5 amps
with a 50 kHz PWM frequency, the EB04 should be provided
with sufcient heatsink to dissipate 25 Watts.
Determining the power dissipated internally involves a
complex set of calculations dependent on load, switching
frequency and duty cycle. Worse case switching losses
occur when driving an inductive load at maximum current
and maintaining a duty cycle large enough to keep the load
current moving in one direction only.
Switching Losses in this case:
1. Mostly occurs during the "ON" transition of the upper
FET of the "sourcing" half-bridge and the "ON" transition
of the lower FET of the "sinking" half-bridge, and is
proportional to frequency.
2. The switching time for the other two transistors is a function
of the "Reverse Recovery Time" of the respective body
diodes and is relatively short.
Conductive Losses are a function of:
1. The "ON" Duty Cycle and I2RDS(on) losses of the upper
"sourcing" FET and the I2RDS(on) losses of the lower
"sinking" FET.
2. The "OFF" Duty Cycle and IE (Iavg x VSD) losses of the body
diodes of the other two FETs in the half-bridges.
This data sheet has been carefully checked and is believed to be reliable, however, no responsibility is assumed for possible inaccuracies or omissions. All speciciations are subject to change without notice.
EBO4U REV. A OCTOBER 2001 2001 Apex Microtechnology Corporation
APPLICATION REFERENCES:
For additional technical information please refer to the
following Application Notes:
AN 01: General Operating Considerations
AN 40: Using the Easy Bridge as a Brushless DC Motor
Driver
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