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參數(shù)資料
| 型號： | E |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | RF PIN Diode |
| 中文描述： | 射頻PIN二極管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 49K |
| 代理商： | E |
Document Number 85644
Rev. 1, 23-Oct-02
www.vishay.com
2
VISHAY
BAR65V-02V
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25°C unless otherwise specified)
Diode capacitance
f = 1 MHz, V
R
= 0
f = 1 MHz, V
R
= 1 V
f = 1 MHz, V
R
= 3 V
f = 100 MHz, I
F
= 1 mA
f = 100 MHz, I
F
= 5 mA
f = 100 MHz, I
F
= 10 mA
I
F
= 10 mA, I
R
= 6 mA, i
R
= 3 mA
C
D
C
D
C
D
r
f
r
f
r
f
t
rr
0.65
pF
0.55
0.9
pF
0.50
0.8
pF
Forward resistance
1
0.6
0.95
0.52
0.9
Charge carrier life time
150
ns
Parameter
Test condition
Sub type
Symbol
Min
Typ.
Max
Unit
Figure 1. Forward Resistance vs. Forward Current
Figure 2. Diode Capacitance vs. Reverse Voltage
0.1
1.0
10.0
100.0
0.10
1.00
10.00
100.00
16898
I
F
– Forward Current ( mA )
r
f
f = 100 MHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
5
10
15
20
25
30
16899
V
R
– Reverse Voltage (V)
C
D
f = 1 MHz
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