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參數(shù)資料
| 型號(hào)： | E35A2CR |
| 廠商： | KEC Holdings |
| 英文描述： | STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) |
| 中文描述： | 堆棧擴(kuò)散硅二極管（發(fā)電機(jī)二極管汽車(chē)） |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 59K |
| 代理商： | E35A2CR |
2000. 7. 11
1/1
SEMICONDUCTOR
TECHNICAL DATA
E35A23VDS, E35A23VDR
STACK SILICON DIFFUSED DIODE
Revision No : 0
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=35A.
Zener Voltage : 23V(Typ.)
POLARITY
E35A23VDS (+ Type)
E35A23VDR (- Type)
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
C
D1
PD
9.5 0.2
8.4 0.2
1.2
R0.5
Φ1.5
5 0.4
G
F
L1
3.1 0.1
MILLIMETERS
DIM
E
L2
DIM
MILLIMETERS
TYPE
R
S
POLARITY
23.0 1.0
19.0 1.0
A
B
E
C
D
F
L1
G
L2
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
VFM
IFM=100A
-
1.15
V
Reverse Voltage
VZ
IR=10mA
20
23
26
V
Repetitive Peak Reverse Current
IRRM
VR=17V
-
10
A
Zener Voltage
Temperature Coefficient
T
IZ=10mA
-
0.077
-
%/
Reverse Leakage Current Under
High Temperature
HIR
Ta=150 , VR=VRM
-
2.5
mA
Temperature Resistance
Rth
Junction to case
-
0.8
-
/W
CHARACTERISTIC
SYMBOL
RATING
UNIT
Average Forward Current
IF(AV)
35
A
Peak 1 Cycle Surge Current
IFSM
350
(10ms Condition)
A
Repetitive Peak Revese Voltage
VRRM
17
V
Junction Temperature
Tj
-40 200
Storage Temperature Range
Tstg
-40 200
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E35A2CS | 制造商:KEC 制造商全稱(chēng):KEC(Korea Electronics) 功能描述:STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) |
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| E35A37VBS | 制造商:KEC 制造商全稱(chēng):KEC(Korea Electronics) 功能描述:STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) |
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