參數(shù)資料
型號(hào)： E28F016SV-120
廠商： INTEL CORP
元件分類： PROM
英文描述： 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
中文描述： 1M X 16 FLASH 5V PROM, 120 ns, PDSO56
封裝： 20 X 14 MM, TSOP1-56
文件頁數(shù)： 1/37頁
文件大?。?/td> 611K
代理商： E28F016SV-120
E
PRODUCT PREVIEW
June 1997
Order Number: 290597-003
n
SmartVoltage Technology
Smart 5 Flash: 5V V
CC
and 5V or
12V V
PP
n
High-Performance
4, 8 Mbit: 85 ns Read Access Time
16 Mbit: 95 ns Read Access Time
n
Enhanced Data Protection Features
Absolute Protection with V
PP
= GND
Flexible Block Locking
Block Write Lockout during Power
Transitions
n
Enhanced Automated Suspend Options
Program Suspend to Read
Block Erase Suspend to Program
Block Erase Suspend to Read
n
Industry-Standard Packaging
40-Lead TSOP, 44-Lead PSOP
n
High-Density 64-Kbyte Symmetrical
Erase Block Architecture
4 Mbit: Eight Blocks
8 Mbit: Sixteen Blocks
16 Mbit: Thirty-Two Blocks
n
Extended Cycling Capability
100,000 Block Erase Cycles
n
Low Power Management
Deep Power-Down Mode
Automatic Power Savings Mode
Decreases I
CC
in Static Mode
n
Automated Program and Block Erase
Command User Interface
Status Register
n
SRAM-Compatible Write Interface
n
ETOX V Nonvolatile Flash
Technology
Intel’s byte-wide Smart 5 FlashFile memory family renders a variety of density offerings in the same
package. The 4-, 8-, and 16-Mbit byte-wide FlashFile memories provide high-density, low-cost, nonvolatile,
read/write storage solutions for a wide range of applications. Their symmetrically-blocked architecture, flexible
voltage, and extended cycling provide highly flexible components suitable for resident flash arrays, SIMMs,
and memory cards. Enhanced suspend capabilities provide an ideal solution for code or data storage
applications. For secure code storage applications, such as networking, where code is either directly
executed out of flash or downloaded to DRAM, the 4-, 8-, and 16-Mbit FlashFile memories offer three levels
of protection: absolute protection with V
PP
at GND, selective hardware block locking, or flexible software
block locking. These alternatives give designers ultimate control of their code security needs.
This family of products is manufactured on Intel’s 0.4
μ
m ETOX V process technology. They come in
industry-standard packages: the 40-lead TSOP, ideal for board-constrained applications, and the rugged
44-lead PSOP. Based on the 28F008SA architecture, the byte-wide Smart 5 FlashFile memory family
enables quick and easy upgrades for designs that demand state-of-the-art technology.
BYTE-WIDE
SMART 5 FlashFile MEMORY FAMILY
4, 8, AND 16 MBIT
28F004S5, 28F008S5, 28F016S5
Includes Commercial and Extended Temperature Specifications
相關(guān)PDF資料
PDF描述
E28F008BVB120 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
E28F008BVT70 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
E28F008SA-85 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
E28F008SC-85 BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
E28F016XS20 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
E28F016XD-85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
E28F016XS15 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
E28F016XS-15 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
E28F016XS20 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
E28F016XS-20 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
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