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參數(shù)資料
| 型號(hào)： | E28F004BVT120 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 512K X 8 FLASH 5V PROM, PDSO40 |
| 封裝： | 20 X 10 MM, TSOP-40 |
| 文件頁(yè)數(shù)： | 1/50頁(yè) |
| 文件大?。?/td> | 559K |
| 代理商： | E28F004BVT120 |
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*
Other brands and names are the property of their respective owners.
Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.
November 1995
COPYRIGHT
INTEL CORPORATION, 1995
Order Number: 290451-005
4-MBIT (256K X 16, 512K X 8)
BOOT BLOCK
FLASH MEMORY FAMILY
28F400BX-T/B, 28F004BX-T/B
Y
x8/x16 Input/Output Architecture
D 28F400BX-T, 28F400BX-B
D For High Performance and High
Integration 16-bit and 32-bit CPUs
Y
x8-only Input/Output Architecture
D 28F004BX-T, 28F004BX-B
D For Space Constrained 8-bit
Applications
Y
Upgradeable to Intel’s Smart Voltage
Products
Y
Optimized High-Density Blocked
Architecture
D One 16-KB Protected Boot Block
D Two 8-KB Parameter Blocks
D One 96-KB Main Block
D Three 128-KB Main Blocks
D Top or Bottom Boot Locations
Y
Extended Cycling Capability
D 100,000 Block Erase Cycles
Y
Automated Word/Byte Write and Block
Erase
D Command User Interface
D Status Registers
D Erase Suspend Capability
Y
SRAM-Compatible Write Interface
Y
Automatic Power Savings Feature
D 1 mA Typical I
CC
Active Current in
Static Operation
Y
Very High-Performance Read
D 60/80/120 ns Maximum Access Time
D 30/40/40 ns Maximum Output Enable
Time
Y
Low Power Consumption
D 20 mA Typical Active Read Current
Y
Reset/Deep Power-Down Input
D 0.2
m
A I
CC
Typical
D Acts as Reset for Boot Operations
Y
Extended Temperature Operation
D
b
40
§
C to
a
85
§
C
Y
Write Protection for Boot Block
Y
Hardware Data Protection Feature
D Erase/Write Lockout During Power
Transitions
Y
Industry Standard Surface Mount
Packaging
D 28F400BX: JEDEC ROM Compatible
44-Lead PSOP
56-Lead TSOP
D 28F004BX: 40-Lead TSOP
Y
12V Word/Byte Write and Block Erase
D V
PP
e
12V
g
5% Standard
D V
PP
e
12V
g
10% Option
Y
ETOX
TM
III Flash Technology
D 5V Read
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| E28F016S5-120 | BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E28F004BVT60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004BVT80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004BVT-80 | 制造商:Intel 功能描述:NOR Flash, 512K x 8, 40 Pin, Plastic, TSSOP |
| E28F004BX-B120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004BX-B60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
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