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參數(shù)資料
| 型號： | E2560 |
| 英文描述： | E2560/E2580-Type 10 Gbits/s EML Modules |
| 中文描述： | E2560/E2580-Type 10 Gb /秒EML的模塊 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 637K |
| 代理商： | E2560 |
Lucent Technologies Inc.
3
Advance Data Sheet
January 1999
E2560/E2580-Type 10 Gbits/s EML Modules
Target Specifications
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are
absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in
excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for
extended periods can adversely affect device reliability.
Table 3. Absolute Maximum Ratings
Characteristics
Table 4. Optical and Electrical Specifications (Chip operating temp. = 15
°C to 35 °C, except where noted.)
Parameter
Conditions
Limit
Unit
Laser Diode Reverse Voltage
CW
2
V
Laser Diode Forward Current
CW
150
mA
Optical Output Power
CW
10
mW
Modulator Reverse Voltage
—
5
V
Modulator Forward Voltage
—
1
V
Monitor Diode Reverse Voltage
—
10
V
Monitor Diode Forward Voltage
—
1
V
Storage Temperature
—
–40 to +85
°C
Operating Temperature
—
–10 to +70
°C
Parameter
Symbol
Conditions
Min
Max
Unit
Threshold Current (BOL)
Ith
—
5
35
mA
Forward Voltage
VF
If = Iop @ Top
—2.2
V
Operating Current
Iop
—
50
100
mA
Threshold Power
Pth
If – Ith
Vm = Iop
—80
W
Fiber Output Power (Peak)
Ppk
Vm = 0 V
If = Iop
1—
dBm
Peak Wavelength
(Wavelength can be specified
to the ITU wavelength
channels.)
λ0
Vm = 0 V
Tlaser chip = Top
If = Iop
1530
1563
nm
Side-mode Suppression Ratio
SMSR
Vm = 0 V
If = Iop, Top
30
—
dB
Dispersion Penalty
BER = 10–10
DP
10 Gbits/s*
Vlow = –1.5 to –3.0 V,
Vhigh = 0 V to –1 V
If = lop @ Top
—2.0
dB
* Over 720 ps/nm (40 km version), 1440 ps/nm (80 km version).
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