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參數(shù)資料
| 型號： | E2500 |
| 英文描述： | E2500-Type 2.5 Gbits/s Electroabsorption Moudlated Isolated Laser Module (EM-ILM) for Ultralong-Reach Applications |
| 中文描述： | E2500型2.5 Gb /秒電吸收Moudlated隔離激光模組（電磁，為超長的ILM）到達(dá)應(yīng)用 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 230K |
| 代理商： | E2500 |
Data Sheet, Rev. 1
September 2001
Isolated Laser Module (EM-ILM)
E2500-Type 2.5 Gbits/s Electroabsorption Modulated
Agere Systems Inc.
3
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso-
lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operations section of the data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability.
Characteristics
Parameter
Conditions
Limit
Unit
Laser Diode Reverse Voltage
CW
2
V
Laser Diode Forward Current
CW
150
mA
Optical Output Power
CW
10
mW
Modulator Reverse Voltage
—
5
V
Modulator Forward Voltage
—
1
V
Monitor Diode Reverse Voltage
—
10
V
Monitor Diode Forward Current
—
1
mA
Storage Temperature Range
—
–40 to +85
°C
Operating Temperature Range
—
0 to 70
°C
Table 2. Optical and Electrical Specifications
Parameter
Symbol
Conditions
Min Max
Unit
Laser: Laser TOP (temperature of laser submount) = 15
°C to 35 °C, except where noted.
Threshold Current (BOL)
ITH
TLASER CHIP = TOP
535
mA
Forward Voltage
VF
If = IOP @ TOP
—2.0
V
Operating Current
IOP
TLASER CHIP = TOP
50
100
mA
Threshold Power
PTH
TLASER CHIP = TOP
If = ITH, VM = 0 V
—80
W
Fiber Output Power (peak)
PPK
TLASER CHIP = TOP
VM = 0 V, If = IOP
1—
dBm
Peak Wavelength (wavelength can be
specified to the ITU-T wavelength chan-
nels)
λ0
VM = 0 V
TLASER CHIP = TOP,
If = IOP
1530 1563
nm
Side-mode Suppression Ratio
SMSR
VM = 0 V, If = IOP,TOP
30
—
dB
Time Resolved Spectroscopy (chirp),
E2505 Series
TRSP-P
2.5 Gbits/s
VLOW = –1.5 V to –3.0 V
VHIGH = 0 V
If = IOP @ TOP
—0.25
Time Resolved Spectroscopy (chirp),
E2502 Series
TRSP-P
2.5 Gbits/s
VLOW = –1.5 V to –3.0 V,
VHIGH = –0.3 V
If = IOP @ TOP
—0.15
Dispersion Penalty
DP
2.5 Gbits/s
360 km (E2505)
600 km (E2502)
VLOW = –1.5 V to –3.0 V
VHIGH = 0 V (E2505), –0.3 V (E2502)
IF = IOP @ TOP
—2.0
dB
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| E2505H20 | E2500-Type 2.5 Gbits/s Electroabsorption Moudlated Isolated Laser Module (EM-ILM) for Ultralong-Reach Applications |
| E2505H21 | E2500-Type 2.5 Gbits/s Electroabsorption Moudlated Isolated Laser Module (EM-ILM) for Ultralong-Reach Applications |
| E2505H22 | E2500-Type 2.5 Gbits/s Electroabsorption Moudlated Isolated Laser Module (EM-ILM) for Ultralong-Reach Applications |
| E2505H23 | E2500-Type 2.5 Gbits/s Electroabsorption Moudlated Isolated Laser Module (EM-ILM) for Ultralong-Reach Applications |
| E2505H24 | E2500-Type 2.5 Gbits/s Electroabsorption Moudlated Isolated Laser Module (EM-ILM) for Ultralong-Reach Applications |
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