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參數(shù)資料
| 型號： | E13009L |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | High Voltage Switch Mode Applications |
| 中文描述： | 高壓開關模式的應用程序 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | E13009L |
2000 Fairchild Semiconductor International
Rev. A, February 2000
K
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
* Pulse test: PW
≤
300
μ
s, Duty cycle
≤
2% Pulse
Parameter
Value
700
400
9
12
24
6
130
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°
C
°
C
Test Condition
I
C
= 10mA, I
B
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 5V, I
C
= 5A
V
CE
= 5V, I
C
= 8A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
I
C
= 12A, I
B
= 3A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
V
CB
= 10V , f = 0.1MHz
V
CE
= 10V, I
C
= 0.5A
V
CC
=125V, I
C
= 8A
I
B1
= - I
B2
= 1.6A
R
L
= 15,6
Min.
400
Typ.
Max.
Units
V
mA
1
40
30
1
1.5
3
1.2
1.6
8
6
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
V
V
V
V
pF
MHz
μ
s
μ
s
μ
s
V
BE
(sat)
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
C
ob
f
T
t
ON
t
STG
t
F
180
4
1.1
3
0.7
KSE13009L
High Voltage Switch Mode Applications
High Speed Switching
Suitable for Switching Regulator and Motor Control
TO-3P
1
1.Base 2.Collector 3.Emitter
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