參數(shù)資料
型號: E1132R
英文描述: Industrial Control IC
中文描述: 工業(yè)控制IC
文件頁數(shù): 2/3頁
文件大?。?/td> 49K
代理商: E1132R
CHIPDATEN / DIE DATA
(Mechanisch-technische Kenndaten / mechanical-technical characteristic data)
8/99
Testing Conditions
(1) Bridge Resistance is measured between Pad 1 and 4 with Vin = 5V
(2) Output Voltage is measured at relative pressure p= 0 kPa (E113xR) between Pad 2 (V
out+)
and Pad 5 (V
out-) with Vin+ = 5V. Vin- is grounded.
(3) Breakdown Voltage: Pads 1,2,4,5 grounded. Using a constant current of 100A between Pad
3 (plus) and ground (minus) the breakdown voltage is measured between Pad 3 and ground.
(4) Leakage Current: Pads 1,2,4,5 are short circuited. A reverse bias VR=20V is applied
between Pad 3 (plus) and ground (minus). IR is measured between ground (minus) and Pads
1,2,4,5.
E113x R
Electrical Characteristics for 3x3mm Pressure Sensor Chips
Infineon
V
in +
V
in +
Substrate
V
out -
V
out +
Substrate
V
in -
V
out -
1
3
5
4
2
Electrical Characteristics at T= 25°C
Parameter
Symbol
min
max Unit
Bridge Resistance (1)
RB
4
8
kOhm
Output Voltage (2)
Vout
mV
E1139R
-25
25
Breakdown Voltage (3)
VBR
20
100
V
Leakage Current (4)
IR
0
20
nA
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