參數(shù)資料
型號(hào)： DZT953-13
廠商： DIODES INC
元件分類： 功率晶體管
英文描述： PNP SURFACE MOUNT TRANSISTOR
中文描述： 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, PLASTIC PACKAGE-4
文件頁數(shù)： 2/4頁
文件大?。?/td> 159K
代理商： DZT953-13
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
N
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
-140
-50
-1
-10
V
I
C
= -100
μ
A, I
E
= 0
I
C
= -10mA*, I
B
= 0
I
E
= -100
μ
A, I
C
= 0
V
CB
= -100V, I
E
= 0
V
CB
= -100V, I
E
= 0, T
A
=
100
°
C
V
EB
= - 6V, I
C
= 0
Collector-Emitter Breakdown Voltage
-100
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
-6
V
nA
μ
A
nA
Collector Cutoff Current
I
CBO
Emitter Cutoff Current
I
EBO
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
V
CE(SAT)
100
100
50
30
-20
-90
-160
-300
-1010
-50
-115
-220
-420
-1170
mV
I
C
= -100mA, I
= -10mA*
I
I
C
= -2A, I
B
= -200mA*
I
I
C
= -4A, I
B
= -400mA*
I
CE
= -4A, V
CE
= -1V*
I
C
= -10mA, V
= -1V*
I
C
= -1A, V
CE
= -1V*
I
C
= -3A, V
CE
= -1V*
I
C
= -4A, V
CE
= -1V*
I
C
= -10A, V
CE
= -1V*
C
= -1A, I
B
= -100mA*
C
= -4A, I
B
= -400mA*
Base-Emitter Saturation Voltage
V
BE(SAT)
V
BE(ON)
mV
Base-Emitter Turn-On Voltage
-925
15
-1160
300
mV
DC Current Gain
h
FE
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
125
MHz
I
= -100mA, V
CE
= -10V,
f = 50MHz
V
CB
= -10V, f = 1MHz
Output Capacitance
C
obo
65
pF
SWITCHING CHARACTERISTICS
I
C
= -2A, I
B1
= -200mA
I
B2
= 200mA, V
CC
= -10V
Switching Times
t
on
t
off
110
460
ns
*
Measured under pulsed conditions. Pulse width = 300
μ
s
.
Duty cycle
≤
2%
Typical Characteristics
@T
amb
= 25°C unless otherwise specified
Fig. 1 Power Dissipation
VS
. Ambient Temperature (Note 3)
Fig. 2 Collector Current vs. Collector Emitter Voltage
Notes:
3. Device mounted on FR-4 PCB, pad layout as shown on page 4.
DS30941 Rev. 5 - 2
2 of 4
www.diodes.com
DZT953
Diodes Incorporated
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DZT955 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
DZT955-13 功能描述:兩極晶體管 - BJT PNP 1W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DZTA42 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN 300V 0.5A SOT223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, 300V, 0.5A, SOT223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, 300V, 0.5A, SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:40; Operating Temperature Min:-55C; No. of Pins:4 ;RoHS Compliant: Yes
DZTA42-13 功能描述:兩極晶體管 - BJT 1W 300V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DZTA92 制造商:Diodes Incorporated 功能描述:TRANSISTOR PNP 300V 0.5A SOT223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, PNP, 300V, 0.5A, SOT223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, PNP, 300V, 0.5A, SOT223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Power Dissipation Pd:1W; DC Collector Current:-500mA; DC Current Gain hFE:25; Operating Temperature Min:-55C; No. of Pins:4 ;RoHS Compliant: Yes
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