| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SIB911DK-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V PWRPAK SC75-6 | 0 | 1:$0.79000 25:$0.60680 100:$0.53550 250:$0.46412 500:$0.39270 1,000:$0.31238 |
| SIB911DK-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V PWRPAK SC75-6 | 0 | 1:$0.79000 25:$0.60680 100:$0.53550 250:$0.46412 500:$0.39270 1,000:$0.31238 |
| SQJ964EP-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH 60V PPAK 8SOIC | 0 | 3,000:$1.28250 |
| SI7964DP-T1-GE3 | Vishay Siliconix | MOSFET DUAL N-CH 60V PPAK 8SOIC | 0 | 3,000:$1.16100 |
| SI4933DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH DUAL 12V 8-SOIC | 0 | 2,500:$1.10700 |
| SI4818DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 30V 8-SOIC | 0 | 2,500:$1.10700 |
| SI4816DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH DUAL 30V 8-SOIC | 0 | 2,500:$1.10700 |
| SI4562DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 8-SOIC | 0 | 2,500:$1.09755 |
| SQJ844EP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V PPAK 8SOIC | 0 | 3,000:$1.08000 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | 2 個(gè) P 溝道（雙） |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 1.5A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 295 毫歐 @ 1.5A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 4nC @ 8V |
| 輸入電容 (Ciss) @ Vds: | 115pF @ 10V |
| 功率 - 最大: | 1.1W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? SC-75-6L 雙 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? SC-75-6L 雙 |
| 包裝: | 剪切帶 (CT) |