| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| BSZ067N06LS3 G | Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | 14,359 | 1:$1.35000 10:$1.20700 25:$1.06520 100:$0.95850 250:$0.83424 500:$0.74550 1,000:$0.58575 2,500:$0.55025 |
| BSZ067N06LS3 G | Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | 10,000 | 5,000:$0.47215 10,000:$0.45263 25,000:$0.44020 50,000:$0.42600 |
| BSO203SP H | Infineon Technologies | MOSFET P-CH 20V 7A DSO-8 | 4,998 | 1:$1.28000 10:$1.14300 25:$1.00880 100:$0.90800 250:$0.79032 500:$0.70624 1,000:$0.55490 |
| BSO203SP H | Infineon Technologies | MOSFET P-CH 20V 7A DSO-8 | 4,998 | 1:$1.28000 10:$1.14300 25:$1.00880 100:$0.90800 250:$0.79032 500:$0.70624 1,000:$0.55490 |
| BSO203SP H | Infineon Technologies | MOSFET P-CH 20V 7A DSO-8 | 2,500 | 2,500:$0.47082 5,000:$0.44728 12,500:$0.42878 25,000:$0.41701 62,500:$0.40356 |
| BSZ067N06LS3 G | Infineon Technologies | MOSFET N-CH 60V 20A TSDSON-8 | 14,359 | 1:$1.35000 10:$1.20700 25:$1.06520 100:$0.95850 250:$0.83424 500:$0.74550 1,000:$0.58575 2,500:$0.55025 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門(mén) |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 20A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 6.7 毫歐 @ 20A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.2V @ 35µA |
| 閘電荷(Qg) @ Vgs: | 67nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 5100pF @ 30V |
| 功率 - 最大: | 69W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerVDFN |
| 供應(yīng)商設(shè)備封裝: | PG-TSDSON-8（3.3x3.3） |
| 包裝: | 剪切帶 (CT) |