分離式半導(dǎo)體產(chǎn)品 BSC014NE2LSI品牌、價格、PDF參數(shù)

BSC014NE2LSI • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
BSC014NE2LSI Infineon Technologies MOSFET N-CH 25V 33A TDSON-8 6,783 1:$2.23000
10:$1.91000
25:$1.71920
100:$1.55990
250:$1.40076
500:$1.20974
1,000:$1.01872
2,500:$0.92322
BSC014NE2LSI Infineon Technologies MOSFET N-CH 25V 33A TDSON-8 6,783 1:$2.23000
10:$1.91000
25:$1.71920
100:$1.55990
250:$1.40076
500:$1.20974
1,000:$1.01872
2,500:$0.92322
BSC014NE2LSI Infineon Technologies MOSFET N-CH 25V 33A TDSON-8 5,000 5,000:$0.82771
10,000:$0.79588
25,000:$0.77996
50,000:$0.76404
IPD250N06N3 G Infineon Technologies MOSFET N-CH 60V 28A TO252-3 4,820 1:$0.96000
10:$0.82500
25:$0.73800
100:$0.65130
250:$0.56448
500:$0.47762
1,000:$0.37993
IPD250N06N3 G Infineon Technologies MOSFET N-CH 60V 28A TO252-3 4,820 1:$0.96000
10:$0.82500
25:$0.73800
100:$0.65130
250:$0.56448
500:$0.47762
1,000:$0.37993
BSC014NE2LSI • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 25V
電流 - 連續(xù)漏極(Id) @ 25° C: 100A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 1.4 毫歐 @ 30A，10V
Id 時的 Vgs(th)（最大）: 2V @ 250µA
閘電荷(Qg) @ Vgs: 39nC @ 10V
輸入電容 (Ciss) @ Vds: 2700pF @ 12V
功率 - 最大: 74W
安裝類型: 表面貼裝
封裝/外殼: 8-PowerTDFN
供應(yīng)商設(shè)備封裝: PG-TDSON-8
包裝: Digi-Reel®