| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI4160DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 2,500 | 1:$1.46000 25:$1.14920 100:$1.03410 250:$0.90004 500:$0.80430 1,000:$0.63195 |
| SI4160DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 2,500 | 1:$1.46000 25:$1.14920 100:$1.03410 250:$0.90004 500:$0.80430 1,000:$0.63195 |
| SI4160DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.53620 5,000:$0.50939 12,500:$0.48832 25,000:$0.47492 |
| IRF9510STRLPBF | Vishay Siliconix | MOSFET P-CH 100V 4A D2PAK | 695 | 1:$1.55000 25:$1.22120 100:$1.09890 250:$0.95644 |
| IRF9510STRLPBF | Vishay Siliconix | MOSFET P-CH 100V 4A D2PAK | 695 | 1:$1.55000 25:$1.22120 100:$1.09890 250:$0.95644 |
| IRF9510STRLPBF | Vishay Siliconix | MOSFET P-CH 100V 4A D2PAK | 0 | 800:$0.67563 1,600:$0.61050 2,400:$0.56980 5,600:$0.54131 20,000:$0.51893 40,000:$0.50468 |
| 類(lèi)別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 25.4A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 4.9 毫歐 @ 15A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.4V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 54nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 2071pF @ 15V |
| 功率 - 最大: | 5.7W |
| 安裝類(lèi)型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-SOICN |
| 包裝: | Digi-Reel® |